 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| publication number s29cd-j_cl-j_00 revision b amendment 5 issue date may 25, 2011 s29cd-j and s29cl-j flash family s29cd-j and s29cl-j flash family cover sheet s29cd032j, s29cd016j, s29cl032j, s29cl016j 32/16 megabit cmos 2.6 vo lt or 3.3 volt-only simultaneous read/write, dual boot, burst mode flash memory with versatilei/o ? data sheet notice to readers: this document states the current techni cal specifications regarding the spansion product(s) described herein. each product describ ed herein may be designated as advance information, preliminary, or full production. see notice on data sheet designations for definitions.
2 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet notice on data sheet designations spansion inc. issues data sheets with advance informati on or preliminary designations to advise readers of product information or int ended specifications throu ghout the product life cycle, including development, qualification, initial production, and fu ll production. in all cases, however, readers are encouraged to verify that they have the latest information before finalizing their design. the following descriptions of spansion data sheet designations are presented here to highlight their presence and definitions. advance information the advance information designation indicates that spansion inc. is developing one or more specific products, but has not committed any design to production. information pr esented in a document with this designation is likely to change, and in some cases, development on the product may discontinue. spansion inc. therefore places the following c onditions upon advance information content: ?this document contains information on one or mo re products under development at spansion inc. the information is intended to help you evaluate th is product. do not design in this product without contacting the factory. spansion inc. reserves t he right to change or discont inue work on this proposed product without notice.? preliminary the preliminary designation indicates that the produc t development has progressed such that a commitment to production has taken place. this designation covers several aspects of the product life cycle, including product qualification, initial produc tion, and the subsequent phases in t he manufacturing process that occur before full production is achieved. changes to the technical specifications presented in a preliminary document should be expected while keeping these as pects of production under consideration. spansion places the following conditions upon preliminary content: ?this document states the current technical sp ecifications regarding the spansion product(s) described herein. the preliminary status of this document indicates that product qualification has been completed, and that initial production has begun. due to the phases of the manufacturing process that require maintaining efficiency and quality, this doc ument may be revised by subsequent versions or modifications due to changes in technical specifications.? combination some data sheets contain a combination of products with different designations (advance information, preliminary, or full production). this type of docum ent distinguishes these prod ucts and their designations wherever necessary, typically on the first page, t he ordering information page, and pages with the dc characteristics table and the ac erase and program ta ble (in the table notes). the disclaimer on the first page refers the reader to the notice on this page. full production (no designation on document) when a product has been in production for a period of time such that no changes or only nominal changes are expected, the preliminary designation is remove d from the data sheet. nominal changes may include those affecting the number of ordering part numbers available, such as t he addition or deletion of a speed option, temperature range, package type, or v io range. changes may also include those needed to clarify a description or to correct a typographical error or incorre ct specification. spansion inc. applies the following conditions to documents in this category: ?this document states the current technical sp ecifications regarding the spansion product(s) described herein. spansi on inc. deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. however, typographical or specification corrections, or mo difications to the valid comb inations offered may occur.? questions regarding these docum ent designations may be directed to your local sales office. publication number s29cd-j_cl-j_00 revision b amendment 5 issue date may 25, 2011 general description the spansion s29cd-j and s29cl-j devices are floating gate products fabricated in 110-nm process technology. these burst-mode flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks, using separate data and address pins. these products can operate up to 75 mhz (32 mb) or 66 mhz (16 mb), and use a single v cc of 2.5v to 2.75v (s29cd-j) or 3.0v to 3.6v (s29cl-j) that make them ideal for today?s demanding automotive applications. distinctive characteristics ? single 2.6v (s29cd-j) or 3.3v (s29cl-j) for read/program/ erase ? 110 nm floating gate technology ? simultaneous read/write operation with zero latency ? x32 data bus ? dual boot sector configuration (top and bottom) ? flexible sector architecture ? cd016j and cl016j: eight 2k double word, thirty 16k double word, and eight 2k double word sectors ? cd032j and cl032j: eight 2k double word, sixty-two 16k double word, and eight 2k double word sectors ? versatilei/o? control (1.65v to 3.6v) ? programmable burst interface ? linear for 2, 4, and 8 double word burst with wrap around ? secured silicon sector that can be either factory or customer locked ? 20 year data retention (typical) ? cycling endurance: 1 million write cycles per sector (typical) ? command set compatible with jedec (jc42.4) standard ? supports common flash interface (cfi) ? extended temperature range ? persistent and password methods of advanced sector protection ? unlock bypass program command to reduce programming time ? acc input pin to reduce factory programming time ? data polling bits indicate program and erase operation completion ? hardware (wp#) protection of two outermost sectors in the large bank ? ready/busy (ry/by#) output indicates data available to system ? suspend and resume commands for program and erase operation ? offered packages ? 80-pin pqfp ? 80-ball fortified bga ? pb-free package option available ? known good die performance characteristics notice for the 32mb s29cd-j and s29cl-j devices only: please refer to the application note ? recommended mode of operation for spansion ? 110 nm s29cd032j/s29cl032j flash memory ? publication number s29cd-cl032j_recommend_an for programming best practices. s29cd-j and s29cl-j flash family s29cd032j, s29cd016j, s29cl032j, s29cl016j 32/16 megabit cmos 2.6 vo lt or 3.3 volt-only simultaneous read/write, dual boot, burst mode flash memory with versatilei/o ? data sheet read access times speed option (mhz) 75 (32 mb only) 66 56 40 max asynch. access time, ns (t acc )54545454 max synch. burst access, ns (t bacc )8 888 min initial clock delay (clock cycles) 5 5 5 4 max ce# access time, ns (t ce )54545454 max oe# access time, ns (t oe )20202020 current consumption (max values) continuous burst read @ 75 mhz 90 ma program 50 ma erase 50 ma standby mode 60 a typical program and erase times double word programming 18 s sector erase 1.0 s 4 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet table of contents general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 distinctive characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 performance characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1. ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 1.1 valid combinations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2. input/output descriptions and logic symbols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3. block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4. block diagram of simultaneous read/write circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5. physical dimensions/connection diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1 80-pin pqfp connection diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.2 pqr080?80-lead plastic quad flat package physical dimensions . . . . . . . . . . . . . . . . . . 13 5.3 80-ball fortified bga connection diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5.4 special package handling instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5.5 laa080?80-ball fortified ball grid array (13 x 11 mm) physical dimensions. . . . . . . . . . . . 15 6. additional resources . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.1 application notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.2 specification bulletins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.3 hardware and software support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 6.4 contacting spansion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 7. product overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 7.1 memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 8. device operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 8.1 device operation table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 8.2 asynchronous read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 8.3 hardware reset (reset#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 8.4 synchronous (burst) read mode and configuration regi ster. . . . . . . . . . . . . . . . . . . . . . . . 24 8.5 autoselect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 8.6 versatilei/o (v io ) control. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 8.7 program/erase operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 8.8 write operation status. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 8.9 reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 9. advanced sector protection/unprotection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 9.1 advanced sector protection overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 9.2 persistent protection bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 9.3 persistent protection bit lock bit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 9.4 dynamic protection bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 9.5 password protection method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 9.6 hardware data protection methods. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 10. secured silicon sector flash memory region . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 10.1 secured silicon sector protection bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 10.2 secured silicon sector entry and exit commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 11. electronic marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 12. power conservation modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 12.1 standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 12.2 automatic sleep mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 12.3 hardware reset# inpu t operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 12.4 output disable (oe#). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 13. electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 13.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 14. operating ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 5 data sheet 15. dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 15.1 zero power flash. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 16. test conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 17. test specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 17.1 switching waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 18. ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 18.1 v cc and v io power-up. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 18.2 asynchronous operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 18.3 synchronous operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 18.4 hardware reset (reset#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 18.5 write protect (wp#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 18.6 erase/program operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 18.7 alternate ce# controlled erase/program operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 18.8 erase and programming performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 18.9 pqfp and fortified bga pin capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 19. appendix 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 19.1 common flash memory interface (cfi) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 20. appendix 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 20.1 command definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 21. revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 6 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet figures figure 8.1 asynchronous read operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 8.2 synchronous/asynchronous state diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 8.3 end of burst indicator (ind/wait#) timing fo r linear 4 double word burst operation . . . . 26 figure 8.4 initial burst delay control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 8.5 program operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 figure 8.6 erase operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 figure 8.7 data# polling algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 figure 8.8 toggle bit algorithm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 figure 9.1 advanced sector protection/unprotection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 figure 9.2 ppb program operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 figure 9.3 ppb erase operatio n. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 figure 13.1 maximum negative overshoot waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 figure 13.2 maximum positive overshoot wavefo rm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 figure 15.1 i cc1 current vs. time (showing active and automatic sl eep currents) . . . . . . . . . . . . . . . . 53 figure 15.2 typical i cc1 vs. frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 figure 16.1 test setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 figure 17.1 input waveforms and measurement levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 figure 18.1 v cc and v io power-up diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 figure 18.2 conventional read operations timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 figure 18.3 asynchronous command write timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 figure 18.4 burst mode read (x32 mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 figure 18.5 synchronous command write/read timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 figure 18.6 reset# timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 figure 18.7 wp# timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 figure 18.8 program operation timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62 figure 18.9 chip/sector erase operation timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .63 figure 18.10 back-to-back cycle timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .63 figure 18.11 data# polling timings (during embedded algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .64 figure 18.12 toggle bit timings (during embe dded algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .64 figure 18.13 dq2 vs. dq6 for erase/erase suspend operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65 figure 18.14 synchronous data polling timing/toggle bit timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65 figure 18.15 sector protect/unprotect timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .66 figure 18.16 alternate ce# controlled write operation timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 7 data sheet tables table 7.1 s29cd016j/cl016j (top boot) se ctor and memory address map . . . . . . . . . . . . . . . . . . . .18 table 7.2 s29cd016j/cl016j (bottom boot) sector and memory address map . . . . . . . . . . . . . . . . .19 table 7.3 s29cd032j/cl032j (top boot) se ctor and memory address map . . . . . . . . . . . . . . . . . . . .20 table 7.4 s29cd032j/cl032j (bottom boot) sector and memory address map . . . . . . . . . . . . . . . . .21 table 8.1 device bus operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 table 8.2 32-bit linear and burst data order . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 table 8.3 valid configuration register bi t definition for ind/wait# . . . . . . . . . . . . . . . . . . . . . . . . . . .26 table 8.4 burst initial access delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 table 8.5 configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 table 8.6 configuration register after device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 table 8.7 s29cd-j and s29cl-j flash family autoselect codes (high voltage method) . . . . . . . . . .29 table 8.8 dq6 and dq2 indications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38 table 8.9 write operation status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 table 8.10 reset command timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41 table 9.1 sector protection schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .46 table 10.1 secured silicon sector addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48 table 13.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51 table 14.1 operating ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 table 15.1 dc characteristic, cmos compatible . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 table 17.1 test specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54 table 17.2 key to switching waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54 table 18.1 v cc and v io power-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .55 table 18.2 asynchronous read operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56 table 18.3 burst mode for 32 mb and 16 mb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58 table 18.4 hardware reset (reset#) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 table 18.5 erase/program operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .61 table 18.6 alternate ce# controlled erase/program operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .67 table 18.7 erase and programming performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 table 18.8 pqfp and fortified bga pin capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 9 table 19.1 cfi query identification string . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .70 table 19.2 cfi system interface string . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .70 table 19.3 device geometry definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .71 table 19.4 cfi primary vendor-specific extended query . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .71 table 20.1 memory array command definition s (x32 mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .73 table 20.2 sector protection command definitions (x32 mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .74 8 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 1. ordering information the order number (valid combination) is formed by the following: 1.1 valid combinations valid combinations lists configurations planned to be s upported in volume for this device. consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. note on bga package markings the ordering part number that appears on bga packages omits the leading ?s29?. s29cd032j s29cl032j 0 j f a i 0 0 0 packing type 0 = tray, fbga: 180 per tray, min. 10 trays per box tray, pqfp: 66 per tray, min. 10 trays per box 2 = 7? tape and reel, fbga: 400 per reel 3 = 13? tape and reel, fbga: 1600 per reel 13? tape and reel, pqfp: 500 per reel boot sector option (16th character) 0 = top boot with simultaneous operation 1 = bottom boot with simultaneous operation 2 = top boot without simultaneous operation 3 = bottom boot without simultaneous operation autoselect id option (15th character) 0 = 7e, 08, 01/00 autoselect id 1 = 7e, 36, 01/00 autoselect id s29cd016j only 0 = 7e, 46, 01/00 autoselect id s29cl016j only 0 = 7e, 09, 01/00 autoselect id s29cd032j only 0 = 7e, 49, 01/00 autoselect id s29cl032j only temperature range i = industrial (?40c to +85c) m = extended (?40c to +125c) material set a = standard f = pb-free option package type q = plastic quad flat package (pqfp) f = fortified ball grid array, 1.0 mm pitch package clock frequency (11th character) j = 40 mhz m = 56 mhz p = 66 mhz r = 75 mhz (contact factory) initial burst access delay (10th character) 0 = 5-1-1-1, 6-1-1-1, and above 1 = 4-1-1-1 (40 mhz only) device number/description s29cd032j/s29cd016j (2.5 volt-only), s29cl032j/s29cl016j (3.3 volt-only) 32 or 16 megabit (1m or 512k x 32-bit) cmos burst mode, dual boot, simultaneous read/write flash memory manufactured on 110 nm floating gate technology s29cd-j/s29cl-j valid combinations s29cd016j 0j, 1j,0m, 0p qai, qfi, qam, qfm fai, ffi, fam, ffm 00, 01, 02, 03, 10, 11, 12, 13 s29cl016j 00, 01, 02, 03 s29cd032j s29cl032j 0j, 1j, 0m, 0p, 0r 00, 01, 02, 03 may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 9 data sheet 2. input/output descriptions and logic symbols table identifies the input and output packa ge connections provided on the device. symbol type description a19-a0 input address lines for s29cd-j and s29cl-j (a18-a0 for 16 mb and a19-a0 for 32 mb). a9 supports 12v autoselect input. dq31-dq0 i/o data input/output ce# input chip enable. this signal is asynchronous relative to clk for the burst mode. oe# input output enable. this signal is asynch ronous relative to clk for the burst mode. we# input write enable v cc supply device power supply. this signal is asynch ronous relative to clk for the burst mode. v io supply versatilei/o tm input. v ss supply ground nc no connect not connected internally ry/by# output ready/busy output and open drain which require a external pull up resistor. when ry/by# = v oh , the device is ready to accept read operations and commands. when ry/by# = v ol , the device is either executing an embedded algorithm or the device is executing a hardware reset operation. clk input clock input that can be tied to the system or microprocessor clock and provides the fundamental timing and internal operating frequency. adv# input load burst address input. indicates that t he valid address is present on the address inputs. ind# output end of burst indicator for finite bursts only. ind is low when the last word in the burst sequence is at the data outputs. wait# output provides data valid feedback only wh en the burst length is set to continuous. wp# input write protect input. at v il , disables program and erase functions in two outermost sectors of the large bank. acc input acceleration input. at v hh , accelerates erasing and programming. when not used for acceleration, acc = v ss or v cc . reset# input hardware reset. 10 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 3. block diagram note address bus is a19?a0 for 32 mb device, a18?a0 for 16 mb device. data bus is d31?dq0. ind/ wait# input/output buffers x-decoder y- d e c o d e r chip enable output enable logic erase voltage generator pgm voltage generator timer v cc detector state control command register v cc v ss we# reset# acc wp# ce# oe# dq max ? dq0 data latch y- g a t i n g cell matrix address latch burst state control burst address counter adv# clk v io amax-a0 amax-a0 may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 11 data sheet 4. block diagram of simultaneous read/write circuit v cc v ss upper b a nk addre ss re s et# we# ce# adv# s tat e control & command regi s ter upper b a nk x-decoder y-decoder l a tche s a nd control logic oe# dq m a x ?dq0 dq m a x ?dq0 lower b a nk y-decoder x-decoder l a tche s a nd control logic lower b a nk addre ss s t a t us control a m a x ?a0 a m a x ?a0 a m a x ?a0 a m a x ?a0 a m a x ?a0 dq m a x ?dq0 dq m a x ?dq0 12 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 5. physical dimensions/connection diagrams 5.1 80-pin pqfp connection diagram notes 1. on 16 mb device, pin 44 (a19) is nc. 2. pin 69 (ry/by#) is open drain and requires an external pull-up resistor. 1 2 3 4 5 6 7 8 9 10 11 12 1 3 14 15 16 17 1 8 19 20 21 22 2 3 24 dq16 dq17 dq1 8 dq19 v io v ss dq20 dq21 dq22 dq2 3 dq24 dq25 dq26 dq27 v io v ss dq2 8 dq29 dq 3 0 dq 3 1 nc a0 a1 a2 dq15 dq14 dq1 3 dq12 v ss v io dq11 dq10 dq9 dq 8 dq7 dq6 dq5 dq4 v ss v io dq 3 dq2 dq1 dq0 a19 a1 8 a17 a16 8 0797 8 77 76 75 74 7 3 72 71 70 69 6 8 67 66 65 nc ind/wait# nc wp# we# oe# ce# v cc nc v ss adv# ry/by# nc clk re s et# v io a 3 a4 a5 a6 a7 a 8 v ss acc v cc a9 a10 a11 a12 a1 3 a14 a15 25 64 6 3 62 61 60 59 5 8 57 56 55 54 5 3 52 51 50 49 4 8 47 46 45 44 4 3 42 41 26 27 2 8 29 3 0 3 1 3 2 33 3 4 3 5 3 6 3 7 38 3 940 8 0-pin pqfp may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 13 data sheet 5.2 pqr080?80-lead plastic quad fl at package physical dimensions 3213\38.4c package pqr 080 jedec mo-108(b)cb-1 notes symbol min nom max a -- -- 3.35 a1 0.25 -- -- a2 2.70 2.80 2.90 b 0.30 -- 0.45 see note 4 c 0.15 -- 0.23 d 17.00 17.20 17.40 d1 13.90 14.00 14.10 see note 3 d3 -- 12.0 -- reference e -- 0.80 -- basic, see note 7 e 23.00 23.20 23.40 e1 19.90 20.00 20.10 see note 3 e3 -- 18.40 -- reference aaa --- 0.20 --- ccc 0.10 l 0.73 0.88 1.03 p24 q40 r64 s80 notes: 1. all dimensions and tolerances conform to ansi y14.5m-1982. 2. datum plane -a- is located at the mold parting line and is coincident with the bottom of the lead where the lead exits the plastic body. 3. dimensions "d1" and "e1" do not includ mold protrusion. allowable protrusion is 0.25 mm per side. dimensions "d1" and "e1" include mold mismatch and are determined at datum plane -a- 4. dimension "b" does not include dambar protrusion. 5. controlling dimensions: millimeter. 6. dimensions "d" and "e" are measured from both innermost and outermost points. 7. deviation from lead-tip true position shall be within 0.0076 mm for pitch > 0.5 mm and within 0.04 for pitch < 0.5 mm. 8. lead coplanarity shall be within: (refer to 06-500) 1 - 0.10 mm for devices with lead pitch of 0.65 - 0.80 mm 2 - 0.076 mm for devices with lead pitch of 0.50 mm. coplanarity is measured per specification 06-500. 9. half span (center of package to lead tip) shall be within 0.0085". b c section s-s 6 3 3 6 -b- pin r pin s -a- pin one i.d. d1 d d3 pin q -d- pin p e e1 e3 see note 3 a a1 a2 -c- -a- seating plane 2 e basic see detail x s s detail x 0.25 a c ccc sd s 4 c ab m a a b 0?-7? a 0?min. l gage plane 7? typ. 0.30 0.05 r 7? typ. 0.20 min. flat shoulder 14 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 5.3 80-ball fortified bga connection diagrams notes 1. on 16 mb device, ball d3 (a19) is nc. 2. ball f5 (ry/by#) is open drain and requires an external pull-up resistor. 5.4 special package handling instructions special handling is required for flash memory products in molded packages (bga). the package and/or data integrity may be compromised if the package body is exposed to temperatures above 150c for prolonged periods of time. b 3 c 3 d 3 e 3 f 3 g 3 h 3 b4 c4 d4 e4 f4 g4 h4 b5 c5 d5 e5 f5 g5 h5 b6 c6 d6 e6 f6 g6 h6 b7 c7 d7 e7 f7 g7 h7 b 8 c 8 d 8 e 8 f 8 g 8 h 8 dq20 v io v ss v io dq29 a0 a1 dq1 8 dq2 3 dq24 dq26 dq 3 0 nc a4 dq19 dq21 dq25 dq2 8 dq 3 1 a7 a5 dq17 dq22 ry/by# dq27 nc nc a 8 wp# dq9 dq5 dq1 nc a10 a9 dq11 dq10 dq6 dq2 a19 a11 a12 a 3 a4 a5 a6 a7 a 8 a2 a 3 a6 v ss acc v cc b2 c2 d2 e2 f2 g2 h2 dq12 dq 8 dq7 dq4 dq0 a1 8 a1 3 a2 a14 b1 c1 d1 e1 f1 g1 h1 dq1 3 j 3 j4 j5 j6 j7 j 8 dq16 ind/wait# oe# ce# nc adv# j2 dq14 j1 dq15 k 3 k4 k5 k6 k7 k 8 nc nc we# v cc v ss clk k2 re s et# k1 v io v io v ss v io dq 3 a17 a16 a1 a15 may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 15 data sheet 5.5 laa080?80-ball fortified ball grid a rray (13 x 11 mm) physical dimensions 3214\38.12c package laa 080 jedec n/a 13.00 x 11.00 mm note package symbol min nom max a -- -- 1.40 profile height a1 0.40 -- -- standoff a2 0.60 -- -- body thickness d 13.00 bsc. body size e 11.00 bsc. body size d1 9.00 bsc. matrix footprint e1 7.00 bsc. matrix footprint md 10 matrix size d direction me 8 matrix size e direction n 80 ball count b 0.50 0.60 0.70 ball diameter ed 1.00 bsc. ball pitch - d direction ee 1.00 bsc. ball pitch - e direction sd/se 0.50 bsc solder ball placement notes: 1. dimensioning and tolerancing methods per asme y14.5m-1994. 2. all dimensions are in millimeters. 3. ball position designation per jesd 95-1, spp-010 (except as noted). 4. e represents the solder ball grid pitch. 5. symbol "md" is the ball row matrix size in the "d" direction. symbol "me" is the ball column matrix size in the "e" direction. n is the total number of solder balls. 6 dimension "b" is measured at the maximum ball diameter in a plane parallel to datum c. 7 sd and se are measured with respect to datums a and b and define the position of the center solder ball in the outer row. when there is an odd number of solder balls in the outer row parallel to the d or e dimension, respectively, sd or se = 0.000. when there is an even number of solder balls in the outer row , sd or se = e/2 8. n/a 9. "+" indicates the theoretical center of depopulated balls. bottom view side view top view 2x 2x c 0.20 c 0.20 6 7 7 a c c 0.10 0.25 m m b c 0.25 0.15 c a b c seating plane j k ed (ink or laser) corner a1 a2 d e 0.50 a1 corner id. 1.000.5 1.000.5 a a1 corner a1 nx b sd se ee e1 d1 1 2 3 4 5 6 7 8 a cb d fe g h 16 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 6. additional resources visit www.spansion.com to obtain the following related documents: 6.1 application notes the following is a list of application notes related to this product. all spansion application notes are available at http://www.spansion.com/support/techni caldocuments/pages/applicationnotes.aspx ? using the operation status bits in amd devices ? understanding page mode flash memory devices ? mirrorbit flash memory write buffer programming and page buffer read ? common flash interface version 1. 4 vendor specific extensions 6.2 specification bulletins contact your local sales office for details. 6.3 hardware and software support downloads and related information on flash device support is available at http://www.spansion.com/su pport/pages/support.aspx ? spansion low-level drivers ? enhanced flash drivers ? flash file system downloads and related information on simulation modeling and cad modeling support is available at http://www.spansion.com/suppor t/pages/simulationmodels.aspx vhdl and verilog ? ibis ? orcad 6.4 contacting spansion obtain the latest list of company locations and contact information on our web site at http://www.spansion.com/ab out/pages/locations.aspx may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 17 data sheet 7. product overview the s29cd-j and s29cl-j families consist of 32 mb and 16 mb, 2.6 volt-only (cd-j) or 3.3 volt-only (cl-j), simultaneous read/write, dual boot burst mode flash dev ices optimized for today' s automotive designs. these devices are organized in 1,048,576 double words (32 mb) or 524,288 double words (16 mb) and are capable of linear burst read (2, 4, or 8 double words) with wraparound. (note that 1 double word = 32 bits.) these products also offer single word programming with program/erase suspend and resume functionality. additional features include: ? advanced sector protection methods for protecting sectors as required. ? 256 bytes of secured silicon area for storing customer or factory secured information. the secured silicon sector is one-time programmable. ? electronic marking. 7.1 memory map the s29cd-j and s29cl-j devices consist of two banks organized as shown in table 7.1 , table 7.2 , table 7.3 and table 7.4 . 18 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet notes 1. secured silicon sector overlays this sector when enabled. 2. the bank address is determined by a18 and a17. ba = 00 for bank 0 and ba = 01, 10, or 11 for bank 1. 3. this sector has the additional wp# pin sector protection feature. table 7.1 s29cd016j/cl016j (top boot) sector and memory address map sector sector group x32 address range (a18:a0) sector size (kdwords) sector sector group x32 address range (a18:a0) sector size (kdwords) bank 0 (note 2) sa0 (note 1) sg0 00000h?007ffh 2 bank 1 (note 2) sa15 sg10 20000h?23fffh 16 sa1 sg1 00800h?00fffh 2 sa16 24000h?27fffh 16 sa2 sg2 01000h?017ffh 2 sa17 28000h?2bfffh 16 sa3 sg3 01800h?01fffh 2 sa18 2c000h?2ffffh 16 sa4 sg4 02000h?027ffh 2 sa19 sg11 30000h?33fffh 16 sa5 sg5 02800h?02fffh 2 sa20 34000h?37fffh 16 sa6 sg6 03000h?037ffh 2 sa21 38000h?3bfffh 16 sa7 sg7 03800h?03fffh 2 sa22 3c000h?3ffffh 16 sa8 sg8 04000h?07fffh 16 sa23 sg12 40000h?43fffh 16 sa9 08000h?0bfffh 16 sa24 44000h?47fffh 16 sa10 0c000h?0ffffh 16 sa25 48000h?4bfffh 16 sa11 sg9 10000h?13fffh 16 sa26 4c000h?4ffffh 16 sa12 14000h?17fffh 16 sa27 sg13 50000h?53fffh 16 sa13 18000h?1bfffh 16 sa28 54000h?57fffh 16 sa14 1c000h?1ffffh 16 sa29 58000h?5bfffh 16 sa30 5c000h?5ffffh 16 sa31 sg14 60000h?63fffh 16 sa32 64000h?67fffh 16 sa33 68000h?6bfffh 16 sa34 6c000h?6ffffh 16 sa35 sg15 70000h?73fffh 16 sa36 74000h?77fffh 16 sa37 78000h?7bfffh 16 sa38 sg16 7c000h?7c7ffh 2 sa39 sg17 7c800h?7cfffh 2 sa40 sg18 7d000h?7d7ffh 2 sa41 sg19 7d800h?7dfffh 2 sa42 sg20 7e000h?7e7ffh 2 sa43 sg21 7e800h?7efffh 2 sa44 (note 3) sg22 7f000h?7f7ffh 2 sa45 (note 3) sg23 7f800h?7ffffh 2 may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 19 data sheet notes 1. this sector has the additional wp# pin sector protection feature. 2. the bank address is determined by a18 and a17. ba = 00, 01, or 10 for bank 0 and ba = 11 for bank 1. 3. secured silicon sector overlays this sector when enabled. table 7.2 s29cd016j/cl016j (bottom boot) sector and memory address map sector sector group x32 address range (a18:a0) sector size (kdwords) sector sector group x32 address range (a18:a0) sector size (kdwords) bank 0 (note 2) sa0 (note 1) sg0 00000h?007ffh 2 bank 1 (note 2) sa31 sg14 60000h?63fffh 16 sa1 (note 1) sg1 00800h?00fffh 2 sa32 64000h?67fffh 16 sa2 sg2 01000h?017ffh 2 sa33 68000h?6bfffh 16 sa3 sg3 01800h?01fffh 2 sa34 6c000h?6ffffh 16 sa4 sg4 02000h?027ffh 2 sa35 sg15 70000h?73fffh 16 sa5 sg5 02800h?02fffh 2 sa36 74000h?77fffh 16 sa6 sg6 03000h?037ffh 2 sa37 78000h?7bfffh 16 sa7 sg7 03800h?03fffh 2 sa38 sg16 7c000h?7c7ffh 2 sa8 sg8 04000h?07fffh 16 sa39 sg17 7c800h?7cfffh 2 sa9 08000h?0bfffh 16 sa40 sg18 7d000h?7d7ffh 2 sa10 0c000h?0ffffh 16 sa41 sg19 7d800h?7dfffh 2 sa11 sg9 10000h?13fffh 16 sa42 sg20 7e000h?7e7ffh 2 sa12 14000h?17fffh 16 sa43 sg21 7e800h?7efffh 2 sa13 18000h?1bfffh 16 sa44 sg22 7f000h?7f7ffh 2 sa14 1c000h?1ffffh 16 sa45 (note 3) sg23 7f800h?7ffffh 2 sa15 sg10 20000h?23fffh 16 sa16 24000h?27fffh 16 sa17 28000h?2bfffh 16 sa18 2c000h?2ffffh 16 sa19 sg11 30000h?33fffh 16 sa20 34000h?37fffh 16 sa21 38000h?3bfffh 16 sa22 3c000h?3ffffh 16 sa23 sg12 40000h?43fffh 16 sa24 44000h?47fffh 16 sa25 48000h?4bfffh 16 sa26 4c000h?4ffffh 16 sa27 sg13 50000h?53fffh 16 sa28 54000h?57fffh 16 sa29 58000h?5bfffh 16 sa30 5c000h?5ffffh 16 20 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet notes 1. secured silicon sector overlays this sector when enabled. 2. the bank address is determined by a19 and a18. ba = 00 for bank 0 and ba = 01, 10, or 11 for bank 1. 3. this sector has the additional wp# pin sector protection feature. table 7.3 s29cd032j/cl032j (top boot) sector and memory address map sector sector group x32 address range (a19:a0) sector size (kdwords) sector sector group x32 address range (a19:a0) sector size (kdwords) bank 0 (note 2) bank 1 continued (note 2) sa0 (note 1) sg0 00000h?007ffh 2 sa39 sg16 80000h?83fffh 16 sa1 sg1 00800h?00fffh 2 sa40 84000h?87fffh 16 sa2 sg2 01000h?017ffh 2 sa41 88000h?8bfffh 16 sa3 sg3 01800h?01fffh 2 sa42 8c000h?8ffffh 16 sa4 sg4 02000h?027ffh 2 sa43 sg17 90000h?93fffh 16 sa5 sg5 02800h?02fffh 2 sa44 94000h?97fffh 16 sa6 sg6 03000h?037ffh 2 sa45 98000h?9bfffh 16 sa7 sg7 03800h?03fffh 2 sa46 9c000h?9ffffh 16 sa8 sg8 04000h?07fffh 16 sa47 sg18 a0000h?a3fffh 16 sa9 08000h?0bfffh 16 sa48 a4000h?a7fffh 16 sa10 0c000h?0ffffh 16 sa49 a8000h?abfffh 16 sa11 sg9 10000h?13fffh 16 sa50 ac000h?affffh 16 sa12 14000h?17fffh 16 sa51 sg19 b0000h?b3fffh 16 sa13 18000h?1bfffh 16 sa52 b4000h?b7fffh 16 sa14 1c000h?1ffffh 16 sa53 b8000h?bbfffh 16 sa15 sg10 20000h?23fffh 16 sa54 bc000h?bffffh 16 sa16 24000h?27fffh 16 sa55 sg20 c0000h?c3fffh 16 sa17 28000h?2bfffh 16 sa56 c4000h?c7fffh 16 sa18 2c000h?2ffffh 16 sa57 c8000h?cbfffh 16 sa19 sg11 30000h?33fffh 16 sa58 cc000h?cffffh 16 sa20 34000h?37fffh 16 sa59 sg21 d0000h?d3fffh 16 sa21 38000h?3bfffh 16 sa60 d4000h?d7fffh 16 sa22 3c000h?3ffffh 16 sa61 d8000h?dbfffh 16 bank 1 (note 2) sa62 dc000h?dffffh 16 sa23 sg12 40000h?43fffh 16 sa63 sg22 e0000h?e3fffh 16 sa24 44000h?47fffh 16 sa64 e4000h?e7fffh 16 sa25 48000h?4bfffh 16 sa65 e8000h?ebfffh 16 sa26 4c000h?4ffffh 16 sa66 ec000h?effffh 16 sa27 sg13 50000h?53fffh 16 sa67 sg23 f0000h?f3fffh 16 sa28 54000h?57fffh 16 sa68 f4000h?f7fffh 16 sa29 58000h?5bfffh 16 sa69 f8000h?fbfffh 16 sa30 5c000h?5ffffh 16 sa70 sg24 fc000h?fc7ffh 2 sa31 sg14 60000h?63fffh 16 sa71 sg25 fc800h?fcfffh 2 sa32 64000h?67fffh 16 sa72 sg26 fd000h?fd7ffh 2 sa33 68000h?6bfffh 16 sa73 sg27 fd800h?fdfffh 2 sa34 6c000h?6ffffh 16 sa74 sg28 fe000h?fe7ffh 2 sa35 sg15 70000h?73fffh 16 sa75 sg29 fe800h?fefffh 2 sa36 74000h?77fffh 16 sa76 (note 3) sg30 ff000h?ff7ffh 2 sa37 78000h?7bfffh 16 sa77 (note 3) sg31 ff800h?fffffh 2 sa38 7c000h?7ffffh 16 may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 21 data sheet notes 1. this sector has the additional wp# pin sector protection feature. 2. the bank address is determined by a19 and a18. ba = 00, 01, or 10 for bank 0 and ba = 11 for bank 1. 3. the secured silicon sector overlays this sector when enabled. table 7.4 s29cd032j/cl032j (bottom boot) sector and memory address map sector sector group x32 address range (a19:a0) sector size (kdwords) sector sector group x32 address range (a19:a0) sector size (kdwords) bank 0 (note 2) bank 0 continued (note 2) sa0 (note 3) sg0 00000h?007ffh 2 sa39 sg16 80000h?83fffh 16 sa1 (note 3) sg1 00800h?00fffh 2 sa40 84000h?87fffh 16 sa2 sg2 01000h?017ffh 2 sa41 88000h?8bfffh 16 sa3 sg3 01800h?01fffh 2 sa42 8c000h?8ffffh 16 sa4 sg4 02000h?027ffh 2 sa43 sg17 90000h?93fffh 16 sa5 sg5 02800h?02fffh 2 sa44 94000h?97fffh 16 sa6 sg6 03000h?037ffh 2 sa45 98000h?9bfffh 16 sa7 sg7 03800h?03fffh 2 sa46 9c000h?9ffffh 16 sa8 sg8 04000h?07fffh 16 sa47 sg18 a0000h?a3fffh 16 sa9 08000h?0bfffh 16 sa48 a4000h?a7fffh 16 sa10 0c000h?0ffffh 16 sa49 a8000h?abfffh 16 sa11 sg9 10000h?13fffh 16 sa50 ac000h?affffh 16 sa12 14000h?17fffh 16 sa51 sg19 b0000h?b3fffh 16 sa13 18000h?1bfffh 16 sa52 b4000h?b7fffh 16 sa14 1c000h?1ffffh 16 sa53 b8000h?bbfffh 16 sa15 sg10 20000h?23fffh 16 sa54 bc000h?bffffh 16 sa16 24000h?27fffh 16 bank 1 (note 2) sa17 28000h?2bfffh 16 sa55 sg20 c0000h?c3fffh 16 sa18 2c000h?2ffffh 16 sa56 c4000h?c7fffh 16 sa19 sg11 30000h?33fffh 16 sa57 c8000h?cbfffh 16 sa20 34000h?37fffh 16 sa58 cc000h?cffffh 16 sa21 38000h?3bfffh 16 sa59 sg21 d0000h?d3fffh 16 sa22 3c000h?3ffffh 16 sa60 d4000h?d7fffh 16 sa23 sg12 40000h?43fffh 16 sa61 d8000h?dbfffh 16 sa24 44000h?47fffh 16 sa62 dc000h?dffffh 16 sa25 48000h?4bfffh 16 sa63 sg22 e0000h?e3fffh 16 sa26 4c000h?4ffffh 16 sa64 e4000h?e7fffh 16 sa27 sg13 50000h?53fffh 16 sa65 e8000h?ebfffh 16 sa28 54000h?57fffh 16 sa66 ec000h?effffh 16 sa29 58000h?5bfffh 16 sa67 sg23 f0000h?f3fffh 16 sa30 5c000h?5ffffh 16 sa68 f4000h?f7fffh 16 sa31 sg14 60000h?63fffh 16 sa69 f8000h?fbfffh 16 sa32 64000h?67fffh 16 sa70 sg24 fc000h?fc7ffh 2 sa33 68000h?6bfffh 16 sa71 sg25 fc800h?fcfffh 2 sa34 6c000h?6ffffh 16 sa72 sg26 fd000h?fd7ffh 2 sa35 sg15 70000h?73fffh 16 sa73 sg27 fd800h?fdfffh 2 sa36 74000h?77fffh 16 sa74 sg28 fe000h?fe7ffh 2 sa37 78000h?7bfffh 16 sa75 sg29 fe800h?fefffh 2 sa38 7c000h?7ffffh 16 sa76 sg30 ff000h?ff7ffh 2 sa77 (note 1) sg31 ff800h?fffffh 2 22 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 8. device operations this section describes the read, program, erase, simu ltaneous read/write operatio ns, and reset features of the flash devices. operations are initiated by writing specific commands or a sequence with specific address and data patterns into the command register (see table 8.1 ). the command register itself does not occupy any addressable memory location; rather, it is composed of latches that store the commands, al ong with the address and data information needed to execute the command. the contents of the register serve as input to the internal state machine; the state machine outputs di ctate the function of the device. writing incorrect address and data values or writing them in an improper sequence may plac e the device in an unknown state, in which case the system must write the reset command in order to return the device to the reading array data mode. 8.1 device operation table the device must be set up appr opriately for each operation. table 8.1 describes the required state of each control pin for any particular operation. legend l = logic low = v il , h = logic high = v ih , x = don?t care. notes 1. wp# controls the two outermost sectors of the top boot block or the two outermost sectors of the bottom boot block. 2. dq0 reflects the sector ppb (or sector group ppb) and dq1 reflects the dyb. table 8.1 device bus operation operation ce# oe# we# reset# clk adv# addresses data (dq0?dq31) read l l h h x x a in d out asynchronous write l h l h x x a in d in synchronous write l h l h a in d in standby (ce#) h x x h h x x high-z output disable l h h h x x high-z high-z reset x x x l x x x high-z ppb protection status (note 2) l l h h x x sector address, a9 = v id , a7 ? a0 = 02h 00000001h, (protected) a6 = h 00000000h (unprotect) a6 = l burst read operations load starting burst address l x h h a in x advance burst to next address with appropriate data presented on the data bus l l h h h x burst data out terminate current burst read cycle h x h h x x high-z terminate current burst read cycle with reset# x x h l x x x high-z terminate current burst read cycle; start new burst read cycle lh h h a in x may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 23 data sheet 8.2 asynchronous read all memories require access time to output array data. in an asynchronous read operation, data is read from one memory location at a time. addresses are present ed to the device in random order, and the propagation delay through the device causes the data on its outputs to arrive asynchronously with the address on its inputs. the internal state machine is set for asynchronous ly reading array data upon dev ice power-up, or after a hardware reset. this ensures that no spurious altera tion of the memory content occurs during the power transition. no command is necessary in this mode to obtain array data. standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. the device remains enabled for read access unti l the command register contents are altered. the device has two control functions which must be satisfie d in order to obtain data at the outputs. ce# is the power control and should be used for device selection (ce# must be set to v il to read data). oe# is the output control and should be used to gate data to the output pins if the device is selected (oe# must be set to v il in order to read data). we# should remain at v ih (when reading data). address access time (t acc ) is equal to the delay from stable addresses to valid output data. the chip enable access time (t ce ) is the delay from the stable addresses and stab le ce# to valid data at the output pins. the output enable access time (t oe ) is the delay from the falling edge of oe# to valid data at the output pins (assuming the addresses have been stable for at least a period of t acc -t oe and ce# has been asserted for at least t ce -t oe time). figure 8.1 shows the timing diagram of an asynchronous read operation. figure 8.1 asynchronous read operation note operation is shown for the 32-bit data bus. for the 16-bit data bus, a-1 is required. refer to asynchronous operations on page 56 for timing specifications and to figure 18.2, conventional read operations timings on page 56 for another timing diagram. i cc1 in the dc characteristics table represents the active current spec ification for reading array data. 8.3 hardware reset (reset#) the reset# pin is an active low signal that is used to reset the device under any circumstances. a logic ?0? on this input forces the device out of any mode that is currently executi ng back to the re set state. reset# may be tied to the system reset circuitr y. a system reset would thus also re set the device. to avoid a potential bus contention during a system reset, the device is isolated fr om the dq data bus by tristating the data outputs for the duration of the reset pulse. all data outputs are ?don?t care? during the reset operation. if reset# is asserted during a progra m or erase operation, the ry/by# output remains low until the reset operation is internally complete. the ry/by# pin can be used to determine when the reset operation is complete. since the device offers si multaneous read/write operation, the host system may read a bank after a period of t ready2 , if the bank was in the read/reset mode at the time reset# was asse rted. if one of the d0 d1 d2 d 3 d 3 ce# clk adv# addre ss e s d a t a oe# we# ind/wait# v ih flo a t v oh addre ss 0 addre ss 1 addre ss 2 addre ss 3 flo a t 24 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet banks was in the middle of either a program or erase operation when reset# was assert ed, the user must wait a period of t ready before accessing that bank. asserting reset# during a program or erase operation leaves erroneous data stored in the address locations being operated on at the time of device reset. these locations need updating after the reset operation is complete. see hardware reset (reset#) on page 60 for timing specifications. asserting reset# active during v cc and v io power-up is required to guarantee proper device initialization until v cc and v io have reached their stea dy state voltages. see v cc and v io power-up on page 55 . 8.4 synchronous (burst) read mo de and configuration register when a series of adjacent addresses need to be read fr om the device, the synchronous (or burst read) mode can be used to significantly reduce the overall time neede d for the device to output array data. after an initial access time required for the data from the first address location, subsequent data is output synchronized to a clock input provided by the system. the device offers a linear method of burst read operation which is discussed in 2-, 4-, 8- double word linear burst operation on page 25 . since the device defaults to asynch ronous read mode after power-up or a hardware reset, the configuration register must be set in order to enable the burst read mode. other configuration register settings include the number of wait states to insert before the initial word (t iacc ) of each burst access and when rdy indicates that data is ready to be read. prior to enterin g the burst mode, the system firs t determines the configuration register settings (and read the current register se ttings if desired via the r ead configuration register command sequence), then write the configur ation register command sequence. see configuration register on page 27 , and table 20.1 on page 73 for further details. once the confi guration register is written to enable burst mode operation, all subsequent reads from the array are returned using the burst mode protocols. figure 8.2 synchronous/asynchronous state diagram the device outputs the initial word subjec t to the following operational conditions: ? t iacc specification: the time from the rising edge of the first clock cycle after addresses are latched to valid data on the device outputs. ? configuration register setting cr13-cr10: the total num ber of clock cycles (wait states) that occur before valid data appears on the device out puts. the effect is that t iacc is lengthened. like the main memory access, the secured silicon sector memory is accessed with the same burst or asynchronous timing as defined in the configuration register. however, the us er must recognize burst operations past the 256 byte secured silicon boundary returns invalid data. power- u p/ h a rdw a re re s et a s ynchrono us re a d mode only s ynchrono us re a d mode only s et b u r s t mode config u r a tion regi s ter comm a nd for s ynchrono us mode (d15 = 0) s et b u r s t mode config u r a tion regi s ter comm a nd for a s ynchrono us mode (d15 = 1) may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 25 data sheet burst read operations occur only to the main flash me mory arrays. the configuration register and protection bits are treated as single cycle reads, even when burst mode is enabled . read operations to these locations results in the data remaining valid while oe# is at v il , regardless of the number of clk cycles applied to the device. 8.4.1 2-, 4-, 8- double wo rd linear burst operation in a linear burst read operation, a fixed number of words (2, 4, or 8 double words) are read from consecutive addresses that are determined by the group within which t he starting address falls. note that 1 double word = 32 bits. see table 8.2 for all valid burst output sequences. the ind/wait# signal, or end of burst indicator signal, transitions active (v il ) during the last transfer of data in a linear burst read before a wrap around. this transi tion indicates that the system should initiate another adv# to start the next burst acce ss. if the system continues to cloc k the device, the next access wraps around to the starting address of the previous burst access. the ind/wait# signal is floating when not active. notes 1. the default configuration in the control register for bit 6 is ?1,? indicating that the device delivers data on the rising ed ge of the clk signal. 2. the device is capable of holding data for one clk cycle. 3. if reset# is asserted low during a burst access, the burst access is immediately terminated and the device defaults back to asynchronous read mode. when this happens, the dq data bus signal floats and the configuration register contents are reset to t heir default conditions. 4. ce# must meet the required burst read setup times for burst cycle initiation. if ce# is taken to v ih at any time during the burst linear or burst cycle, the device immediately exits the burst sequence and floats the dq bus signal. 5. restarting a burst cycle is accomplished by taking ce# and adv# to v il . 6. a burst access is initiated and the address is latched on the firs t rising clk edge when adv# is active or upon a rising adv# edge, whichever occurs first. if the adv# signal is taken to vil prior to the end of a linear burst sequence, the previous address is discarded and subsequent burst transfers are invalid. a new burst is initiated when adv# transitions back to v ih before a clock edge. 7. the oe# (output enable) pin is used to enable the linear burst data on the dq data bus pin. de-asserting the oe# pin to v ih during a burst operation floats the data bus, but the device continues to operate internally as if t he burst sequence continues until th e linear burst is complete. the oe# pin does not halt the burst sequence, the dq bus remains in the float state until oe# is taken to v il . 8. halting the burst sequence is accomplished by either taking ce# to v ih or re-issuing a new adv# pulse. the ind/wait# signal is controlled by the oe# signal. if oe# is at v ih , the ind/wait# signal floats and is not driven. if oe# is at v il , the ind/ wait# signal is driven at v ih until it transitions to v il , indicating the end of the burst sequence. table 8.3 lists the valid combinations of the conf iguration register bits that impact the ind/wait# timing. see figure 8.3 for the ind/wait# timing diagram. table 8.2 32-bit linear and burst data order data transfer sequence output data sequence (initial access address) two linear data transfers 0-1 (a0 = 0) 1-0 (a0 = 1) four linear data transfers 0-1-2-3 (a1-a0 = 00) 1-2-3-0 (a1-a0 = 01) 2-3-0-1 (a1-a0 = 10) 3-0-1-2 (a1-a0 = 11) eight linear data transfers 0-1-2-3-4-5-6-7 (a2-a0 = 000) 1-2-3-4-5-6-7-0 (a2-a0 = 001) 2-3-4-5-6-7-0-1 (a2-a0 = 010) 3-4-5-6-7-0-1-2 (a2-a0 = 011) 4-5-6-7-0-1-2-3 (a2-a0 = 100) 5-6-7-0-1-2-3-4 (a2-a0 = 101) 6-7-0-1-2-3-4-5 (a2-a0 = 110) 7-0-1-2-3-4-5-6 (a2-a0 = 111) 26 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet figure 8.3 end of burst indicator (ind/wait#) timing for linear 4 double word burst operation note operation is shown for the 32-bit data bus. figure shown with 3-clk initial access delay configuration, linear address, 4-doubl eword burst, output on rising clk edge, data hold for 1-clk, ind/wait# asserted on the last transfer before wrap-around. 8.4.2 initial burst access delay initial burst access delay is defined as the number of clo ck cycles that must elapse from the first valid clock edge after adv# assertion (or the rising edge of ad v#) until the first valid clk edge when the data is valid. burst access is initiated and the address is latched on th e first rising clk edge when adv# is active or upon a rising adv# edge, whichever comes first. the initial burst access delay is determined in the configuration register (cr13-cr10). refer to table 8.5 for the initial access delay configurations under cr13-cr10. see figure 8.4 for the initial burst delay control timing diagram. note that the initial access delay for a burst access has no effect on asynchronous read operations. table 8.3 valid configuration register bit definition for ind/wait# cr9 (doc) cr8 (wc) cr6 (cc) definition 0 0 1 ind/wait# = v il for 1-clk cycle, active on last transfer, driven on rising clk edge 011 ind/wait# = v il for 1-clk cycle, active on second to last transfer, driven on rising clk edge ce# clk adv# addre ss e s oe# d a t a addre ss 1 addre ss 2 inv a lid d1 d2 d 3 d0 addre ss 1 l a tched 3 clock del a y ind/wait# v il v ih table 8.4 burst initial access delay cr13 cr12 cr11 cr10 initial burst access (clk cycles) 0001 3 0010 4 0011 5 0100 6 0101 7 0 1 1 0 8 0111 9 may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 27 data sheet figure 8.4 initial burst delay control notes 1. burst access starts with a rising clk edge and when adv# is active. 2. configurations register 6 is always set to 1 (cr6 = 1). burst starts and data outputs on the rising clk edge. 3. cr [13-10] = 1 or three clock cycles. 4. cr [13-10] = 2 or four clock cycles. 5. cr [13-10] = 3 or five clock cycles. 8.4.3 configuration register the configuration register sets various operational pa rameters associated with burst mode. upon power-up or hardware reset, the device defaults to the asynch ronous read mode and the config uration register settings are in their default state. (see table 8.6 for the default config uration register setti ngs.) the host system determines the proper settings for the entire configur ation register, and then exec ute the set configuration register command sequence before attempting burst operat ions. the configuration register is not reset after deasserting ce#. the configuration register does not occupy any address able memory location, but rather, is accessed by the configuration register commands. the configuration regi ster is readable at any time, however, writing the configuration register is restricted to times when the embedded algorithm? is not active. if the user attempts to write the configuration register while t he embedded algorithm is active, the write operation is ignored and the contents of the conf iguration register remain unchanged. the configuration register is a 16 bit data field wh ich is accessed by dq15?dq0. during a read operation, dq31?dq16 returns all zeroes. also, the configuration r egister reads operate the same as the autoselect command reads. when the command is issued, the bank a ddress is latched along with the command. read operations to the bank that was specified during the configuration regist er read command return configuration register cont ents. read operations to the other bank re turn flash memory data. either bank address is permitted when writing the co nfiguration register read command. the configuration register can be read with a four-cycle command sequence. see command definitions on page 73 for sequence details. table 8.5 describes the configuration register settings. clk adv# addre ss e s dq 3 1-dq0 3 dq 3 1-dq0 4 dq 3 1-dq0 5 v a lid addre ss three clk del a y 2nd clk 3 rd clk 4th clk 5th clk 1 s t clk fo u r clk del a y addre ss 1 l a tched five clk del a y d0 d1 d2 d 3 d0 d1 d2 d0 d1 d2 d 3 d4 28 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 8.5 autoselect the autoselect mode provides manufa cturer and device identification, an d sector protection verification, through identifier codes output on dq7?dq0. this mo de is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. however, the autoselect codes can also be accessed in-system through th e command register. when using programming equipment, the autoselect mode requires v id on address pin a9. ad-dress pins a6, a1, and a0 must be as shown in table 8.7 . in addition, when verifying sector protection, the sector address table 8.5 configuration register configuration register cr15 = read mode (rm) 0 = synchronous burst reads enabled 1 = asynchronous reads enabled (default) cr14 = reserved for future enhancements these bits are reserved for future use. set these bits to 0 . cr13?cr10 = initial burst access delay configuration (iad3-iad0) 0000 = 2 clk cycle initial burst access delay 0001 = 3 clk cycle initial burst access delay 0010 = 4 clk cycle initial burst access delay 0011 = 5 clk cycle initial burst access delay 0100 = 6 clk cycle initial burst access delay 0101 = 7 clk cycle initial burst access delay 0110 = 8 clk cycle initial burst access delay 0111 = 9 clk cycle initial burst access delay?default cr9 = data output configuration (doc) 0 = hold data for 1-clk cycle?default 1 = reserved cr8 = ind/wait# configuration (wc) 0 = ind/wait# asserted during delay?default 1 = ind/wait# asserted one data cycle before delay cr7 = burst sequence (bs) 0 = reserved 1 = linear burst order?default cr6 = clock configuration (cc) 0 = reserved 1 = burst starts and data output on rising clock edge?default cr5?cr3 = reserved for future enhancements (r) these bits are reserved for future use. set these bits to 0 . cr2?cr0 = burst length (bl2?bl0) 000 = reserved, burst accesses disabled (asynchronous reads only) 001 = 64 bit (8-byte) burst data transfer - x32 linear 010 = 128 bit (16-byte) burst data transfer - x32 linear 011 = 256 bit (32-byte) burst data transfer - x32 linear (device default) 100 = reserved, burst accesses disabled (asynchronous reads only) 101 = reserved, burst accesses disabled (asynchronous reads only) 110 = reserved, burst accesses disabled (asynchronous reads only) table 8.6 configuration register after device reset cr15 cr14 cr13 cr12 cr11 cr10 cr9 cr8 rm reserve iad3 iad2 iad1 iad0 doc reserve 10011100 cr7 cr6 cr5 cr4 cr3 cr2 cr1 cr0 bs cc reserve reserve reserve bl2 bl1 bl0 11000100 may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 29 data sheet must appear on the appropriate highest order address bits. table 8.7 shows the remaining address bits that are don?t care. when all necessary bits have been se t as required, the programming equipment may then read the corresponding identifier code on dq7?dq0. to access the autoselect codes in-system, the hos t system can issue the aut oselect command via the command. this method doe s not require vid. see command definitions on page 73 for details on using the autoselect mode. autoselect mode can be used in ei ther synchronous (burst) mode or asynchronous (non burst) mode. the system must write the reset command to exit the autoselect mode and return to reading the array data. see table 8.7 for command sequence details. legend l = logic low = v il , h = logic high = v ih , sa = sector address, x = don?t care. note the autoselect codes can also be acce ssed in-system via command sequences. see table 20.2 . 8.6 versatilei/o (v io ) control the versatilei/o (v io ) control allows the host system to set the voltage le vels that the device generates at its data outputs and the voltages tolerated at its data inputs to the same voltage level that is asserted on the v io pin. the output voltage generated on the device is determined based on the v io level. for the 2.6 v (cd-j), a v io of 1.65 v?3.6 v (cd032j has a v io of 1.65 v to 2.75 v) allows the dev ice to interface with i/os lower than 2.5 v. for a 3.3 v v cc (cl-j), a v io of 1.65 v?3.60 v allows the device to interface with i/os lower than 3.0 v. 8.7 program/erase operations these devices are capable of several modes of progra mming and or erase operations which are described in detail in the following sections. however, prior to any programming and or erase operation, devices must be set up appropriately as outlined in the configuration register ( table 8.5 on page 28 ). during a synchronous write operation, to write a command or command sequence (including programming data to the device and erasing sectors of memory), the syst em must drive adv# and ce# to v il , and oe# to v ih when providing an address to the device, and drive we# and ce# to v il , and oe# to v ih when writing commands or programming data. table 8.7 s29cd-j and s29cl-j flash family autoselect codes (high voltage method) description ce# oe# we# a19 to a11 a10 a9 a8 a7 a6 a5 to a4 a3 a2 a1 a0 dq7 to dq0 manufacturer id : spansion l l h x x v id xxlxxxl l 0001h autoselect device code read cycle 1 l l h x x v id x l l x l l l h 007eh read cycle 2 l l h x x v id xlllhhhl 08h or 36h for cd016j 46h for cl016j 09h for cd032j 49h for cl032j read cycle 3 l l h x x v id x l l lhhhh 0000h top boot option 0001h bottom boot option ppb protection status l l h sa x v id xlllllhl 0000h (unprotected) 0001h (protected) 30 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 8.7.1 programming programming is a four-bus-cycle o peration. the program co mmand sequence is initiated by writing two unlock write cycles, followed by the program setup command. the program address and data are written next, which in turn initiate the embedded progra m algorithm. the system is not required to provide further controls or timings. the device automatically generat es the program pulses and ve rifies the programmed cell margin. command definitions on page 73 shows the address and data requirements for the program command sequence. note the following: ? when the embedded program algorithm is complete, the device returns to the read mode and address are no longer latched. an address change is requ ired to begin reading valid array data. ? the system can determine the status of the program operation by using dq7, dq6 or ry/by#. refer to write operation status on page 34 for information on these status bits. ? a ?0? cannot be programmed back to a ?1.? attempting to do so may halt the operation and set dq5 to 1, or cause the data# polling algorithm to indicate the operation was successful. a succeeding read shows that the data is still ?0.? only erase operations can convert a ?0? to a ?1.? ? any commands written to the device during the embedded program algorithm are ignored except the program suspend command. ? a hardware reset immediately terminates the prog ram operation; the program command sequence should be re-initiated once the device has returned to the read mode, to ensure data integrity. ? for the 32mb s29cd-j and s29cl-j devices only: please refer to the application note ? recommended mode of operation for spansion ? 110 nm s29cd032j/s29cl032j flash memory ? publication number s29cd-cl032j_recommend_an for programming best practices. figure 8.5 program operation note see table 19.1 and table 20.2 for program command sequence. s ta rt write progr a m comm a nd s e qu ence d a t a poll from s y s tem verify d a t a ? no ye s l as t addre ss ? no ye s progr a mming completed increment addre ss em b edded progr a m a lgorithm in progre ss may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 31 data sheet 8.7.2 sector erase the sector erase function erases one or more sectors in the memory array. (see table 20.1, memory array command definitions (x32 mode) on page 73 and figure 8.6, erase operation on page 32 .) the device does not require the system to preprogram prior to erase. the embedded erase algorithm automatically programs and verifies the entire memory for an all-ze ro data pattern prior to electrical erase. after a successful sector erase, al l locations within the erased sector c ontain ffffh. the system is not required to provide any controls or ti mings during these operations. after the command sequence is written, a sector erase time-out of no less than 80 s occurs. during the time- out period, additional sector addresse s and sector erase commands may be written. loading the sector erase buffer may be done in any sequence, and the number of se ctors may be from one sector to all sectors. the time between these additional cycl es must be less than 80 s. any sector erase add ress and command following the exceeded time-out (80 s) may or may not be accepted. a time-out of 80 s from the rising edge of the last we# (or ce#) initiates the execution of the sector erase co mmand(s). if another falling edge of the we# (or ce#) occurs within the 80 s time-out windo w, the timer is reset. any command other than erase suspend during the time-out period will be interpreted as an additional sector to erase. the device does not decode the data bus, but latc hes the address. (see s29cd016j sector erase time-out functionality application note for further information.). the system can monitor dq3 to determ ine if the sector erase timer has timed out (see dq3: sector erase timer on page 40 .) the time-out begins from the rising edge of the final we# pulse in the command sequence. when the embedded erase algorithm is complete, the bank returns to reading array data; addresses are no longer latched. the system can determine the status of the erase operation by reading dq7 or dq6/dq2 in the erasing bank. refer to write operation status on page 34 for information on these status bits. once the sector erase operation has begun, only the erase suspend command is valid. all other commands are ignored. however, note that a hardware reset imme diately terminates the erase operation. if that occurs, the sector erase command sequence should be re-initiated once that bank has returned to reading array data, in order to ens ure data integrity. figure 8.6 on page 32 illustrates the algorithm for the erase operation. refer to program/erase operations on page 29 for parameters and timing diagrams. 8.7.3 chip erase chip erase is a six-bus cycle operation as indicated by command definitions on page 73 . the chip erase command is used to erase the entire flash memory c ontents of the chip by issuing a single command. however, chip erase does not erase protected sectors. this command invokes the embedded erase algorithm, wh ich does not require the system to preprogram prior to erase. the embedded erase algorithm automatica lly preprograms and verifies the entire memory for an all-zero data pattern prior to electrical erase. after a successful chip erase, all lo cations of the chip contain ffffh. the system is not requir ed to provide any controls or timings during these operations. command definitions on page 73 in the appendix shows the address and data requirements for the chip erase command sequence. when the embedded erase algorithm is complete, that bank returns to the read mode and addresses are no longer latched. the system can determine the status of the erase operation by us ing dq7, dq6 or the ry/ by#. refer to write operation status on page 34 for information on these status bits. any commands written during the chip erase operati on are ignored. however, note that a hardware reset immediately terminates the erase operation. if that o ccurs, the chip erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. 32 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet figure 8.6 erase operation notes 1. see command definitions on page 73 for erase command sequence. 2. see dq3: sector erase timer on page 40 for more information. 8.7.4 erase suspend / erase resume commands the erase suspend command allows the system to inte rrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. when the erase suspend command is written during the sector erase time-out, the device immediatel y terminates the time-out period and suspends the erase operation. the bank address is required when writing this command. this command is valid only during the sector erase operation, including the minimum 80-s time-out period during the sector erase command sequence. the erase suspend command is ignored if written during the chip erase operation. when the erase suspend command is written after the 80-s time-out period has expired and during the sector erase operation, the device takes 20 s maximum to suspend the erase operation. after the erase operation has been suspended, the ba nk enters the erase-suspend-read mode. the system can read data from or program data to any sector t hat is not selected for erasure. (the device ?erase suspends? all sectors selected for erasure.) note that when the device is in the erase suspend mode, the reset command is not required for read operations and is ignored. further nesting of erase operation is not permitted. reading at any address within erase suspended sectors produces status information on dq 7-dq0. the system can use dq6 and dq2 together, to determine if a sector is actively erasing or is erase-suspended. refer to table 8.8 on page 38 for information on these status bits. a read operation from the erase-suspended bank return s polling data during the first 8 s after the erase suspend command is issued; read operations thereafter return array data. read operations from the other bank return array data with no latency. after an erase-suspended program operation is complete , the bank returns to the erase-suspend read mode. the system can determine the status of the program operation using t he dq7, dq6, and/or ry/by# status bits, just as in the standard program operation. to resume the sector erase operation, the syst em must write the erase resume command. the bank address of the erase-suspended bank is required when wr iting this command. furthe r writes of the resume command are ignored. another erase su spend command can be written afte r the chip has resumed erasing. s ta rt write er as e comm a nd s e qu ence d a t a poll from s y s tem d a t a = ffh? no ye s er asu re completed em b edded er as e a lgorithm in progre ss may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 33 data sheet the following are the allowable operations when er ase suspend is issued under certain conditions: for the busy sectors, the host system may ? read status ? write the erase resume command for the non busy sectors, the system may ? read data ? program data or write the suspend/resume erase command 8.7.5 program suspend/p rogram resume commands the program suspend command allows the system to inte rrupt an embedded programm ing operation so that data can read from any non-suspended sector. when the program suspend command is written during a programming process, the device halts the prog ramming operation and updates the status bits. after the programming operation has been suspended, the system can read array data from any non- suspended sector. if a read is needed from the secured silicon sector area, then user must use the proper command sequences to enter and exit this region. the sector erase and program resume command is ignored if the secured silicon sector is enabled. after the program resume command is written, th e device reverts to prog ramming. the system can determine the status of the program o peration using the dq7, dq 6, and/or ry/by# status bits, just as in the standard program operation. see write operation status on page 34 for more information. the system must write the program resume command in order to exit the program suspend mode, and continue the programming operation. further writes of the program resu me command are ignored. another program suspend command can be written after the device has resumed programming. the following are the allowable operations when program suspend is issued under certain conditions: ? for the busy sectors, the host system may write the program resume command ? for the non busy sectors, the system may read data 8.7.6 accelerated pr ogram operations accelerated programming is enabled through the acc f unction. this method is fa ster than the standard program command sequences. the device offers accelerated program operations through the acc pin. when the system asserts v hh (12v) on the acc pin, the device automatically enters the unlock bypass mode. the system may then write the two-cycle unlock bypass program command sequence to do accelerated programming. the device uses the higher voltage on the acc pin to accelerate the operati on. any sector that is being protected with the wp# pin is still protected during accelerated program. removing v hh from the acc input, upon completion of the embedded program operation, returns the device to normal operation. notes ? in this mode, the write pr otection function is bypassed unless the ppb lock bit = 1. ? the acc pin must not be at v hh for operations other than accelerated programming or device damage may result. ? the acc pin must not be left floating or unconnected ; inconsistent behavior of the device may result. ? the accelerated program command is not permitted if the secured silicon sector is enabled. 34 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 8.7.7 unlock bypass the device features an unlock bypass mode to facilitate faster programming, erasing (chip erase), as well as cfi commands. once the device enters the unlock bypass mode, only two write cycles are required to program or erase data, instea d of the normal four cycles for program or 6 cycles for erase. this results in faster total programming/erasing time. command definitions on page 73 shows the requirements for the unlock bypass command sequences. during the unlock bypass mode only the read, unlock bypass program and unlock bypass reset commands are valid. to exit the unlock bypass mode , the system must issue the two-cycle unlock bypass reset command sequence, which returns the device to read mode. notes 1. the unlock bypass command is ignored if the secured silicon sector is enabled. 2. unlike the standard program or erase command s, there is no unlock bypass program/erase suspend or program/erase resume command. 8.7.8 simultaneous read/write the simultaneous read/write f eature allows the host system to read da ta from one bank of memory while programming or erasing in another bank of memory. the simultaneous read/write feature can be used to perform the following: ? programming in one bank, while reading in the other bank ? erasing in one bank, while reading in the other bank ? programming a ppb, while reading data from t he large bank or status from the small bank ? erasing a ppb, while reading data from the la rge bank or status from the small bank ? any of the above situations while in the secured silicon sector mode the simultaneous r/w feature can not be performed during the following modes: ? cfi mode ? password program operation ? password verify operation as an alternative to using the simultaneous read/writ e feature, the user may al so suspend an erase or program operation to read in anot her location within the same bank (except for the sector being erased). restrictions the simultaneous read/write function is tested by executing an embedded operation in the small (busy) bank while performing other operations in the big (non -busy) bank. however, the opposite case is neither tested nor valid. that is, it is not tested by execut ing an embedded operation in the big (busy) bank while performing other operations in the small (non-busy) bank. 8.8 write operation status the device provides several bits to determine the st atus of a program or erase operation. the following subsections describe the function of dq 7, dq6, dq2, dq5, dq3, and ry/by#. may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 35 data sheet 8.8.1 dq7: data# polling the data# polling bit, dq7, indicates to the host system whether an embedded program or erase algorithm is in progress or completed, or whether a bank is in erase suspend. data# polling is valid after the rising edge of the final we# pulse in the co mmand sequence. note that data# polling returns invalid data for the address being programmed or erased. during the embedded program algorithm, the devic e outputs on dq7 the co mplement of the datum programmed to dq7. this dq7 status also appl ies to programming during erase suspend. when the embedded program algorithm is complete, the device outputs the datum programmed to dq7. the system must provide the program address to re ad valid status information on dq7. if a program address falls within a protected sector, data# polling on dq7 is acti ve for approximately 1 s, then that bank returns to the read mode without programming the sector. if an erase address falls within a protected sector, toggle bit (dq6) is active for 15 0 s, then the device returns to the read mode without erasing the sector. please note that data# polling (dq7) may give misleading status when an attempt is made to program or erase a protected sector. during the embedded erase algorithm, data# polling produces a ?0? on dq7. when the embedded erase algorithm is complete data# polling produces a ?1? on dq7. the system must provi de an address within any of the sectors selected for erasure to read valid status information on dq7. in asynchronous mode, just prior to the completion of an embedded program or erase operation, dq7 may change asynchronously with dq6-dq0 whil e output enable (oe#) is asserted low. that is, the device may change from providing status information to valid data on dq7. depending on when the system samples the dq7 output, it may read the status or valid data. ev en if the device has comple ted the program or erase operation and dq7 has valid data, the data outputs on dq6-dq0 may be still invalid. valid data on dq7-d00 appears on successive read cycles. see the following for more information: table 8.9, write operation status on page 40 shows the outputs for data# polling on dq7. figure 8.7, data# polling algorithm on page 36 shows the data# polling timing diagram. 36 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet figure 8.7 data# polling algorithm notes 1. va = valid address for programming. during a sector erase operation, a valid address is an address within any sector selected for erasure. during chip erase, a valid address is any non-protected sector address. 2. dq7 should be rechecked even if dq5 = 1 because dq7 may change simultaneously with dq5 dq7 = d a t a ? ye s no no dq5 = 1? no ye s ye s fail pa ss re a d dq7?dq0 addr = va re a d dq7?dq0 addr = va dq7 = d a t a ? s ta rt may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 37 data sheet 8.8.2 dq6: toggle bit i toggle bit i on dq6 indicates whether an embedded program or erase algorithm is in progress or complete, or whether the device has ent ered the erase suspend mode. toggle bit i may be read at any address in the same bank, and is valid after the rising edge of the final we# pulse in the command sequence (prior to the program or erase operation), and duri ng the sector erase time- out. during an embedded program or erase algorithm operatio n, two immediate consecutive read cycles to any address cause dq6 to toggle. when the operation is co mplete, dq6 stops toggling. for asynchronous mode, either oe# or ce# can be used to control the read cycl es. for synchronous mode, the rising edge of adv# is used or the rising edge of clock while adv# is low. after an erase command sequence is written, if all sect ors selected for erasing are protected, dq6 toggles for approximately 100 s, then returns to reading array data. if not all se lected sectors are protected, the embedded erase algorithm erases the unprotected sect ors, and ignores the selected sectors that are protected. the system can use dq6 and dq2 toget her to determine whether a sector is actively erasing or is erase- suspended. when the device is actively erasing (that is, the embedded erase algorithm is in progress), dq6 toggles. when the device enters the erase suspend mode, dq 6 stops toggling. howe ver, the system must also use dq2 to determine which sectors are erasing or erase-suspended. alternativ ely, the system can use dq7 (see the subsection on dq7: data# polling). if a program address falls within a protected sector, dq6 toggles for approximatel y 1 s after the program command sequence is written, then returns to reading array data. dq6 also toggles during the erase-suspend-program mode, and stops toggling once the embedded program algorithm is complete. see figure 18.12, toggle bit timings (during embedded algorithms) on page 64 for additional information. 8.8.3 dq2: toggle bit ii the ?toggle bit ii? on dq2, when used with dq6, indicates whether a particular sector is actively erasing (that is, the embedded erase algorithm is in progress), or whether that sector is erase-suspended. toggle bit ii is valid after the rising edge of the final we# pulse in the command sequence. dq2 toggles when the system performs two consecutive reads at addresses within thos e sectors that have been selected for erasure. but dq2 cannot distinguish whether the sector is actively erasing or is erase-suspen ded. dq6, by comparison, indicates whether the device is actively erasing, or is in erase suspend, but cannot distinguish which sectors are selected for erasure. thus, both status bits are required for sector and mode information. refer to table 8.8 to compare outputs for dq2 and dq6. see dq6: toggle bit i on page 37 for additional information. 38 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 8.8.4 reading toggle bits dq6/dq2 whenever the system initially begins reading toggle bit status, it must perform two consecutive reads of dq7- dq0 in a row in order to de termine whether a togg le bit is toggling. typically, the system notes and stores the value of the toggle bit after the first read. after the second read, the system compares the new value of the toggle bit with the first. if the toggle bit is not togglin g, the device completes the pr ogram or erases operation. the system can read array data on dq7-dq0 on the following read cycle. however, if after the initial two re ad cycles, the system determi nes that the toggle bit is still to ggling, the system also notes whether the value of dq5 is high (see the secti on on dq5). if it is, the system then determines again whether the toggle bit is toggling, sinc e the toggle bit may have stopped toggling just as dq5 went high. if the toggle bit is no longer toggling, the device has successfully completed the program or erases operation. if it is still t oggling, the device had not completed the operation successfully, and the system writes the reset command to return to reading array data. the remaining scenario is that the system initially determines that the toggle bit is toggling and dq5 has not gone high. the system may continue to monitor the toggle bit and dq5 through successive read cycles, determining the status as described in the previous paragraph. alternatively, the system may choose to perform other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation. refer to figure 8.8 for more on the t oggle bit algorithm. table 8.8 dq6 and dq2 indications if device is and the system reads then dq6 and dq2 programming, at any address, toggles, does not toggle. actively erasing, at an address within a sector selected for erasure, toggles, also toggles. at an address within sectors not selected for erasure, toggles, does not toggle erase suspended, at an address within sectors selected for erasure, does not toggle, toggles. at an address within sectors not selected for erasure, returns array data, returns array data. the system can read from any sector not selected for erasure. programming in erase suspend, at any address, toggles, is not applicable. may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 39 data sheet figure 8.8 toggle bit algorithm notes 1. read toggle bit with two immediately consecutive reads to determine whether or not it is toggling. 2. recheck toggle bit because it may stop toggling as dq5 changes to 1 . 8.8.5 dq5: exceeded timing limits dq5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. under these conditions dq5 produces a 1. this is a failure condition that indicates the program or erase cycle was not successfully completed. the dq5 failure conditi on may appear if the system tries to progra m a 1 to a location that is previously programmed to 0. only an erase operation can change a 0 back to a 1. under this condition, the device halts the operation, and when the operation has exc eeded the timing limits, dq5 produces a 1. under both these conditions, the system issues the reset command to return the device to reading array data. s ta rt no ye s ye s dq5 = 1? no ye s dq6 = toggle? no re a d byte (dq0-dq7) addre ss = va dq6 = toggle? re a d byte twice (dq0-dq7) adrde ss = va re a d byte (dq0-dq7) addre ss = va fail pa ss (note 1) (notes 1 , 2 ) 40 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 8.8.6 dq3: sector erase timer after writing a sector erase comm and sequence, the system may read dq 3 to determ ine whether or not erasure has begun. (the sector erase ti mer does not apply to the chip eras e command.) if additional sectors are selected for erasure, the entire time-out also ap plies after each additional sector erase command. when the time-out period is complete, dq3 switches from a ?0 ? to a ?1.? if the time between additional sector erase commands from the system can be assumed to be le ss than 50 s, the system need not monitor dq3. see sector erase on page 31 for more details. after the sector erase command is written, the syst em reads the status of dq7 (data# polling) or dq6 (toggle bit i) to ensure that the device has accepted the command sequence, then r eads dq3. if dq3 is ?1,? the embedded erase algorithm has begun; all further commands (except erase suspend) are ignored until the erase operation is complete. if dq3 is ?0,? th e device accepts additional sector erase commands. to ensure the command ha s been accepted, the system software check the status of dq3 prior to and following each sub-sequent sector erase command. if dq 3 is high on the second status check, the last command might not have been accepted. table 8.9 shows the status of dq3 relati ve to the other status bits. 8.8.7 ry/by#: ready/busy# the device provides a ry/by# open drain output pin as a way to indicate to the host system that the embedded algorithms are either in progress or have been completed. if the output of ry/by# is low, the device is busy with either a program, erase, or reset operati on. if the output is floating, the device is ready to accept any read/write or erase o peration. when the ry/by# pin is lo w, the device will not accept any additional program or erase commands with the exception of the erase suspend command. if the device has entered erase suspend mode, the ry/b y# output is floating. for program ming, the ry/by# is valid (ry/by# = 0) after the rising edge of the fourth we# pulse in the four write pulse sequence. for chip erase, the ry/ by# is valid after the rising edge of the sixth we# pulse in the six write pulse sequence. for sector erase, the ry/by# is also valid after the rising edge of the sixth we# pulse. if reset# is asserted during a progra m or erase operation, the ry/by# pin remains a 0 (busy) until the internal reset operation is complete, which requires a time of t ready (during embedded algorithms). the system can thus monitor ry/by# to determine whet her the reset operation is complete. if reset# is asserted when a program or erase oper ation is not executing (ry/by# pin is floating), the reset operation is completed in a time of t ready (not during embedded algorithms). the system can read data t rh after the reset# pin returns to v ih . since the ry/by# pin is an open-drain ou tput, several ry/by# pins can be tied together in parallel with a pull- up resistor to v cc . an external pull-up resistor is required to take ry/by# to a v ih level since the output is an open drain. table 8.9 shows the outputs for ry/by#, dq7, dq6, dq5, dq3 and dq2. figure 18.2 , figure 18.6 , figure 18.8 and figure 18.9 show ry/by# for read, reset, program , and erase operations, respectively. notes 1. dq5 switches to 1 when an embedded program or embedded erase operation has exceeded the maximum timing limits. see dq5: exceeded timing limits on page 39 for more information. 2. dq7 and dq2 require a valid address when reading status information. see dq7: data# polling on page 35 and dq2: toggle bit ii on page 37 for further details. table 8.9 write operation status operation dq7 (note 2) dq6 dq5 (note 1) dq3 dq2 (note 2) ry/by# standard mode embedded program algorithm dq7# toggle 0 n/a no toggle 0 embedded erase algorithm 0 toggle 0 1 toggle 0 erase suspend mode reading within erase suspended sector 1 no toggle 0 n/a toggle 1 reading within non-erase suspended sector data data data data data 1 erase-suspend-program dq7# toggle 0 n/a n/a 0 may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 41 data sheet 8.9 reset command writing the reset command resets the device to the r ead or erase-suspend-read mode . address bits are don?t cares for this command. the reset command may be writt en between the cycles in an erase command sequence before erasing begins. this resets the device to the read mode. howe ver, once erasure begins, the device ignores the reset commands until the operation is complete. the reset command may be writt en between the cycles in a progr am command sequence before programming begins. this resets the device to the read mode. if the program command sequence is written while the device is in the erase su spend mode, writing the reset comma nd returns the device to the erase- suspend-read mode. however, once programming begin s, the device ignores th e reset commands until the operation is complete. the reset command may be written between the cycles in an autoselect command sequence. once in the autoselect mode, the reset command must be written to exit the autoselect mode and return to the read mode. if dq5 goes high during a program or erase operation, writing the reset command returns the device to the read mode or erase-suspend-read-mode if the device was in erase suspend. when the reset command is written, before the embedded operati on starts, the device requires t rr before it returns to the read or erase- suspend-read mode. 9. advanced sector protection/unprotection the advanced sector protec tion/unprotection feature disables or ena bles programming or erase operations in any or all sectors and can be implemented thr ough software and/or hardware methods, which are independent of each other. this sectio n describes the various methods of protecting data stored in the memory array. an overview of these methods in shown in figure 9.1 . table 8.10 reset command timing parameter description max. unit t rr reset command to read mode or erase-suspend-read mode 250 ns 42 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet figure 9.1 advanced sector protection/unprotection h a rdw a re method ss oftw a re method s wp# = v il (two o u termo s t s ector s locked in l a rge ba nk) ppb lock bit 1,2, 3 64- b it p ass word (one time protect) 1 = ppb s locked 0 = ppb s unlocked memory arr a y s ector gro u p 0 s ector gro u p 1 s ector gro u p 2 s ector gro u p n-2 s ector gro u p n-1 s ector gro u p n 4 ppb 0 ppb 1 ppb 2 ppb n-2 ppb n-1 ppb n per s i s tent protection bit (ppb) 5,6 dyb 0 dyb 1 dyb 2 dyb n-2 dyb n-1 dyb n dyn a mic protection bit (dyb) 7, 8 ,9 7. protect effective only if ppb lock bit i s u nlocked a nd corre s ponding ppb i s ? 0 ? ( u nprotected). 8 . vol a tile bit s . 9. 0 = s ector gro u p unprotected; 1 = s ector gro u p protected 5. ppb s progr a mmed individ ua lly, bu t cle a red collectively. 6. 0 = s ector gro u p unprotected; 1 = s ector gro u p protected 1. bit i s vol a tile, a nd def au lt s to ? 0 ? on re s et. 2. progr a mming to ? 1 ? lock s a ll ppb s to their c u rrent s t a te. 3 . once progr a mmed to ? 1 ? , re qu ire s h a rdw a re re s et to u nlock. 4. n = 2 3 for s 29cd016j/cl016j, 3 1 for s 29cd0 3 2j/cl0 3 2j. p ass word method per s i s tent method may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 43 data sheet 9.1 advanced sector protection overview as shipped from the factory, all devic es default to the persistent mode when power is applied, and all sector groups are unprotected. the device programmer or host system must then choose which sector group protection method to use. programming (setting to ?0 ?) any one of the following two one-time programmable, non-volatile bits locks the device permanently in that mode: ? persistent protection mode lock bit ? password protection mode lock bit after selecting a sector group protec tion method, each sector group can operate in any of the following three states: 1. persistently locked. a sector grou p is protected and cannot be changed. 2. dynamically locked. the selected sector groups are protected and can be altered via software commands. 3. unlocked. the sector groups are unprotec ted and can be erased and/or programmed. these states are controlled by the bit types described in sections persistent protection bits on page 43 to hardware data protection methods on page 47 . notes 1. if the password mode is chosen, the pass word must be programmed before setting the corresponding lock register bit. the user must be sure that the password is correct when the password mode locking bit is set, as there is no means to verify the password afterwards. 2. if both lock bits are selected to be programmed (to zeros) at the same time, the operation aborts. 3. once the password mode lock bit is programmed, the persistent mode lock bit is permanently disabled, and no changes to the protection scheme are allowed. similarly, if the persistent mode lock bit is programmed, the password mode is permanently disabled. 4. it is important that the mode is explicitly select ed when the device is first programmed, rather than relying on the default mode alone. this is so that it is impossible for a system program or virus to later set the password mode locking bit, which would cause an unexpected shift from the default persistent sector protection mode into the password protection mode. 5. if the user attempts to program or erase a pr otected sector, the device ignores the command and returns to read mode. a program command to a protected sector enab les status polling for approximately 1 s before the device returns to read mode without modifying the contents of the protected sector. an erase command to a protected sector enables status polling for approximately 50 s, after which the device returns to read mode without having erased the protected sector. 6. for the command sequence required for prog ramming the lock register bits, refer to command definitions on page 73 . 9.2 persistent protection bits the persistent protection bits ar e unique and nonvolatile. a single persistent protection bit is assigned to a maximum for four sectors (see the se ctor address tables for specific sect or protection groupings). all eight- kbyte boot-block sectors have individual sector persiste nt protection bits (ppbs) for greater flexibility. notes 1. each ppb is individually programmed and all are erased in parallel. there are no means for individually erasing a specific ppb and no specific sector address is required for this operation. 2. if a ppb requires erasure, all of the sector ppbs must first be programmed prior to ppb erasing. it is the responsibility of the user to perform the preprogramming operation. otherwise, an already erased sector ppb has the potential of being over-erased. t here is no hardware mechanism to prevent sector ppb over-erasure. 3. if the ppb lock bit is set, the ppb program or erase command does not execute and times-out without programming or erasing the ppb. 44 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 9.2.1 programming ppb the ppb program command is used to program, or set, a given ppb. the first three cycles in the ppb program command are standard unlock cycles. the four th cycle in the ppb program command executes the pulse which programs the specified ppb. the user must wait either 100 s or until dq6 st ops toggling before executing the fifth cycle, which is the read veri fy portion of the ppb program command. the sixth cycle outputs the status of the ppb program operation. in the event th at the program ppb operat ion was not successful, the user can loop directly to the fourth cycle of the ppb program command to perform the program pulse and read verification again. after four unsuccessful loops through the program pulse and read verification cycles the ppb programming operation should be considered a failure. figure 9.2 ppb program operation 9.2.2 erasing ppb the all ppb erase command is used to erase all the ppbs in bulk. there are no means for individually erasing a specific ppb. the first three cycles of the ppb erase command are standard unlock cycles. the fourth cycle executes the erase pulse to all the ppbs. the user must wait either 20 ms or until dq6 stops toggling before ex ecuting the fifth cycle, which is the read ve rify portion of the ppb erase command. the sixth cycle outputs the status of the ppb erase operation. in the event that the erase ppb operation was not su ccessful, the user can loop directly to the fourth cycle of the all ppb erase command to perform the erase pulse and read verification again. after four unsuccessful loops through the erase pulse and read verification cycles, the ppb erasing operation should be considered a failure. note ? all ppb must be preprogrammed prior to issuing the al l ppb erase command. either poll dq6 in the s m a ll ba nk a nd w a it for it to s top toggling or w a it 100 s dq0 = 1? write 0x6 8 to s g+wp write 0x4 8 to s g+wp re a d from s g+wp ye s no ye s no done error write 0xaa to 0x555 write 0x55 to 0x2aa write 0x60 to 0x555 5th a ttempt? note: re a d s from the s m a ll ba nk a t thi s point ret u rn the s t a t us of the oper a tion, not re a d a rr a y d a t a . may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 45 data sheet figure 9.3 ppb erase operation 9.3 persistent protection bit lock bit the persistent protecti on bit lock bit is a global vo latile bit for all sectors. wh en set to ?1?, it locks all ppbs; when set to ?0?, it allows the ppbs to be ch anged. there is only one ppb lock bit per device. notes 1. no software command sequence unlocks this bit unless the device is in the password protection mode; only a hardware reset or a power-up clears this bit. 2. the ppb lock bit must be se t only after all ppbs are configur ed to the desired settings. 9.4 dynamic protection bits a dynamic protection bit (dyb) is volatile and unique for each sector group and can be individually modified. dybs only control the protection sch eme for unprotected sector groups that have thei r ppbs set to ?0?. by issuing the dyb set or clear command sequences, the dybs are set or cl eared, thus placing each sector group in the protected or unprotected st ate respectively. this feature allows software to easily protect sector groups against inadvertent changes, yet does not prevent the easy remova l of protection when changes are needed. notes 1. the dybs can be set or cleared as of ten as needed with the dyb write command. 2. when the parts are first shippe d, the ppbs are cleared , the dybs are cleared, and ppb lock is defaulted to power up in the cleared state ? meani ng the ppbs are changeable. the dyb are also always cleared after a power-up or reset. 3. it is possible to have sector groups that are persi stently locked with sector groups that are left in the dynamic state. either poll dq6 in the s m a ll ba nk a nd w a it for it to s top toggling or w a it 20 m s dq0 = 0? write 0x60 to wp write 0x40 to wp re a d from wp ye s no ye s no done error write 0xaa to 0x555 write 0x55 to 0x2aa write 0x60 to 0x555 5th a ttempt? note: re a d s from the s m a ll ba nk a t thi s point ret u rn the s t a t us of the oper a tion, not re a d a rr a y d a t a . 46 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 4. the dyb set or clear commands for the dynam ic sector groups sign ify the prot ected or unprotected state of the sector groups respectively. however, if there is a need to change the status of the persistently locked sector groups, a few more steps are required. first, the ppb lock bit must be cleared by either putting the device through a power-cycle, or hardware reset. the ppbs can then be changed to reflect the desired settings. setting the ppb lock bit once again locks the ppbs, and the device operates normally again. 9.5 password protection method the password protection method allows an even higher leve l of security than the pers istent sector protection mode by requiring a 64-bit password for unlocking the device ppb lock bit. in addition to this password requirement, after power-up and reset, the ppb lock bit is set ?1? in order to maintain the password mode of operation. successful execution of the password unlock command by entering the entire password clears the ppb lock bit, allowing for se ctor ppbs modifications. notes 1. there is no special addressing order required fo r programming the password. once the password is written and verified, the password mode locking bit must be set in order to prevent access. 2. the password program command is only capable of programming ?0?s. programming a ?1? after a cell is programmed as a ?0? results in a time-out with the cell as a ?0?. (this is an otp area). 3. the password is all ?1?s when shipped from the factory. 4. when the password is undergoing programming, si multaneous read/write operation is disabled. read operations to any memory location return s the programming status. once programming is complete, the user must issue a read/reset command to return the device to normal operation. 5. all 64-bit password combinations are valid as a password. 6. there is no means to read, program or erase the password is after it is set. 7. the password mode lock bit, once set, prevents reading the 64-bit password on the data bus and further password programming. 8. the password mode lock bit is not erasable. 9. the exact password must be entered in order for the unlocking function to occur. 10. there is a built-in 2-s delay for each password chec k. this delay is intended to stop any efforts to run a program that tries all possible combinations in order to crack the password. table 9.1 sector protection schemes dyb ppb ppb lock sector state 0 0 0 unprotected?ppb and dyb are changeable 0 0 1 unprotected?ppb not changeable, dyb is changeable 01 0 protected?ppb and dyb are changeable 10 0 11 0 01 1 protected?ppb not changeable, dyb is changeable 10 1 11 1 may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 47 data sheet 9.6 hardware data protection methods the device offers several methods of data protection by which intended or accidental erasure of any sectors can be prevented via hardware means. the following subsections describe these methods. 9.6.1 wp# method the write protect feature pr ovides a hardware method of protecting the two outermost sectors of the large bank. if the system asserts v il on the wp# pin, the device disables pr ogram and erase functions in the two ?outermost? boot sectors (8-kbyte sectors) in the large bank. if the system asserts v ih on the wp# pin, the device reverts to whether the boot sectors were last se t to be protected or unprotected. that is, sector protection or unprotection for these sectors depends on whether they were last protected or unprotected. note that the wp# pin must not be left floating or un connected as inconsistent behavior of the device may result. the wp# pin must be held stable during a command sequence execution 9.6.2 low v cc write inhibit when v cc is less than v lko , the device does not accept any write cycles. this protects data during v cc power-up and power-down. the command register and all internal program/erase ci rcuits are disabled, and the device resets to reading array data. subsequent wr ites are ignored until v cc is greater than v lko . the system must provide the proper signals to the control inputs to prevent unintentional writes when v cc is greater than v lko . 9.6.3 write pulse ?glitch protection? noise pulses of less than 5 ns (typical) on oe#, ce# or we # do not initiate a write cycle. 9.6.4 power-up write inhibit if we# = ce# = reset# = v il and oe# = v ih during power-up, the device does not accept commands on the rising edge of we#. the internal state machine is automatically reset to the read mode on power-up. 9.6.5 v cc and v io power-up and power-down sequencing the device imposes no restrictions on v cc and v io power-up or power-down s equencing. asse rting reset# to v il is required during the entire v cc and v io power sequence until the respective supplies reach the operating voltages. once v cc and v io attain the operating voltages, deassertion of reset# to v ih is permitted. refer to timing in v cc and v io power-up on page 55 . 9.6.6 logical inhibit write cycles are inhi bited by holding an y one of oe# = v il , ce# = v ih , or we# = v ih . to initiate a write cycle, ce# and we# must be a logical zero (v il ) while oe# is a logical one (v ih ). 48 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 10. secured silicon sector flash memory region the secured silicon sector provides an extra flash memo ry region that enables permanent part identification through an electronic serial number ( esn). the secured silicon sector is a 256-byte flash memory area that is either programmable at the customer, or by spansion at the request of the customer. see table 10.1 for the secured silicon sector address ranges. all secured silicon reads outside of the 256-byte address range return invalid data. the device allows simultaneous read/write operation whil e the secured silicon sector is enabled. however, several restrictions are associat ed with simultaneous read/write operation and device operation when the secured silicon sector is enabled: 1. the secured silicon sector is not available for reading while the password unlock, any ppb program/erase operation, or password programming are in progress. reading to any location in the small bank will return the status of these o perations until these operations have completed execution. 2. programming the dyb associated with the overlaid boot-block sector results in the dyb not being updated. this occurs only when the secured silicon sector is not enabled. 3. reading the dyb associated with the overlaid boot-block sector when the ppb lock/dyb verify command is issued, causes the read command to return invalid data. this function occurs only when the secured silicon sector is not enabled. 4. all commands are available for execution when the secured silicon sector is enabled, except the following: a. any unlock bypass command b. cfi c. accelerated program d. program and sector erase suspend e. program and sector erase resume issuing the above commands while the secured silicon sector is enabled results in the command being ignored. 5. it is valid to execute the sector erase command on any sector other than the secured silicon sector when the secured silicon sector is enable d. however, it is not possible to erase the secured silicon sector using the sector erase co mmand, as it is a one-time programmable (otp) area that can not be erased. 6. executing the chip erase command is permitted when the secured silicon sector is enabled. the chip erase command erases all sectors in the memo ry array, except for sector 0 in top-boot block configuration, or sector 45 in bottom-boot block configuration. the secured silicon sector is a one- time programmable memory area that cannot be erased. 7. executing the secured silicon sector entry co mmand during program or erase suspend mode is allowed. the sector erase/pr ogram resume command is disabled when the secured silicon sector is enabled; the user cann ot resume programming of the me mory array until the exit secured silicon sector command is written. 8. address range 00040h?007ffh for the top bootblock, and ff00h?fff7fh return invalid data when addressed with the secured silicon sector enabled. 9. the secured silicon sector entry command is allo wed when the device is in either program or erase suspend modes. if the secured silicon sect or is enabled, the program or erase suspend command is ignored. this prevents resuming either programming or erasure on the secured table 10.1 secured silicon sector addresses ordering option sector size (bytes) address range top boot 256 00000h-0003fh (16 mb and 32 mb) bottom boot 256 fffc0h?fffffh (32 mb) 7ffc0h?7ffffh (16 mb) may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 49 data sheet silicon sector if the overlayed sector was und ergoing programming or erasure. the host system must ensure that the device resume any suspend ed program or erase operation after exiting the secured silicon sector. 10.1 secured silicon se ctor protection bit the secured silicon sector can be sh ipped unprotected, allowing customer s to utilize that sector in any manner they choose. please note the following: ? the secured silicon sector can be read any number of times, but can be programmed and locked only once. the secured silicon sector protection bit must be used with caution as once locked, there is no procedure available for unlocking the secured silicon sector area and none of the bits in the secured silicon sector memory space can be modified in any way. ? once the secured silicon sector is locked and verifi ed, the system must write the exit secured silicon sector region command sequence to return the device to the memory array. 10.2 secured silicon sector entry and exit commands the system can access the secured s ilicon sector region by issuing th e three-cycle enter secured silicon sector command sequence. the device continues to access the secured silicon sector region until the system issues the four-cycle exit secured silicon sector command sequence. see the table 20.1, memory array command definitions (x32 mode) on page 73 and table 20.2, sector protection command definitions (x32 mode) on page 74 for address and data requirements for both command sequences. the secured silicon sector entry command allows the following commands to be executed ? read secured silicon areas ? program secured silicon sector (only once) after the system has written the enter secured silicon sector command sequence, it can read the secured silicon sector by using the addresses listed in table 10.1, secured silicon sector addresses on page 48 . this mode of oper ation continues un til the system issues the exit secured silicon sector command sequence, or until power is removed from the device. 11. electronic marking electronic marking has been programmed into the device , prior to shipment from spansion, to ensure traceability of individual products. the electroni c marking is stored and locked within a one-time programmable region. detailed information on electronic marking will be provided in a data sheet supplement. 12. power conservation modes 12.1 standby mode when the system is not reading or writing to the device, it can place the device in st andby mode. in this mode, current consumption is greatly reduc ed, and outputs are placed in a hi gh impedance state, independent of oe# input. the device enters cmos standby mode wh en the ce# and reset# inputs are both held at v cc 10%. the device requires standard access time (t ce ) for read access before it is ready to read data. if the device is deselected during erasure or programming, the device draws ac tive current until the operation is completed. i cc5 in dc characteristic, cmos compatible on page 52 represents the standby current specification. 50 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet caution entering standby mode via the reset# pin also resets t he device to read mode and floats the data i/o pins. furthermore, entering i cc7 during a program or erase operation leaves erroneous data in the address locations being operated on at the time of the reset # pulse. these locations require updating after the device resumes standard operations. see hardware reset# input operation on page 50 for further discussion of the reset# pin and its functions. 12.2 automatic sleep mode the automatic sleep mode minimizes flash device e nergy consumption. the automatic sleep mode is independent of the ce#, we# and oe# control signals. while in sleep mode, output data is latched and always available to the system. while in asynchronous mode, the device automatically enables this mode when addresses remain stable for t acc + 60 ns. standard address access timings provide new data when addresses are changed. while in synchronous mode, the device automatically enables th is mode when either the first active clk level is greater than t acc or the clk runs slower than 5 mhz. a new bur st operation is requir ed to provide new data. i cc8 in dc characteristic, cmos compatible on page 52 represents the automat ic sleep mode current specification. 12.3 hardware reset# input operation the reset# input provides a hardware method of re setting the device to reading array data. when reset# is driven low, the device immediately terminates any o peration in progress, tristate s all outputs, resets the configuration register, and ignores all read/write commands for the durati on of the reset# pulse. the device also resets the internal state machine to reading ar ray data. any operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, in order to ensure data integrity. when reset# is held at v ss 0.2 v, the device draws cmos standby current (i cc4 ). if reset# is held at v il but not within v ss 0.2 v, the standby current is greater. reset# may be tied to the system reset circuitry, thus a system reset would also reset the flash memory, enabling the system to read the boot -up firmware from the flash memory. if reset# is asserted during a prog ram or erase operation, the ry/ by# pin remains low until the reset operation is internally complete. this action requires be tween 1 s and 7 s for either chip erase or sector erase. the ry/by# pin can be used to determine whethe r the reset operation is co mplete. otherwise, allow for the maximum reset time of 11 s. if reset# is asserted when a program or erase operatio n is not executing (ry/by# = 1), the reset operation completes within 500 ns. the simultaneous read/write feat ure of this device allows the user to read a bank after 500 ns if the bank is in the read/reset mode at t he time reset# is asserted. if one of the banks is in the middle of either a pr ogram or erase operation when reset# is a sserted, the user must wait 11 s before accessing that bank. asserting reset# active during v cc and v io power up is required to guaran tee proper device initialization until v cc and v io have reached stea dy state voltages. 12.4 output disable (oe#) when the oe# input is at v ih , output from the device is disabled. the outputs are placed in the high impedance state. may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 51 data sheet 13. electrical specifications 13.1 absolute maximum ratings notes 1. minimum dc voltage on input or i/o pins is ?0.5 v. duri ng voltage transitions, input at i/o pins may overshoot v ss to ?2.0v for periods of up to 20 ns. see figure 13.2 . maximum dc voltage on output and i/o pins is 3.6v. du ring voltage transitions output pins may overshoot to v cc + 2.0v for periods up to 20 ns. see figure 13.2 . 2. minimum dc input voltage on pins acc, a9, and reset# is -0.5v. during voltage transitions, a9 and reset# may overshoot v ss to ?2.0v for periods of up to 20 ns. see figure 13.1 . maximum dc input voltage on pin a9 is +13.0v which may overshoot to 14.0v for periods up to 20 ns. 3. no more than one output may be shorted to ground at a time. duration of the short circuit should not be greater than one seco nd. 4. stresses above those listed under absolute maximum ratings may cause permanent damage to the de vice. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this d ata sheet is not implied. exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. figure 13.1 maximum negative overshoot waveform figure 13.2 maximum positive overshoot waveform table 13.1 absolute maximum ratings parameter rating storage temperature, plastic packages ?65 c to +150 c ambient temperature with power applied ?65 c to +145 c v cc , v io (note 1) for 2.6 v devices (s29cd-j) ?0.5v to +3.6v v cc , v io (note 1) for 3.3 v devices (s29cl-j) ?0.5v to +3.6v acc, a9 , and reset# (note 2) ?0.5v to +13.0v address, data, control signals (note 1) (with the exception of clk) ?0.5v to +3.6v (cl016j) ?0.5v to +2.75v (cd016j) all other pins (note 1) ?0.5v to +3.6v (cl032j) ?0.5v to +2.75v (cd032j) output short circuit current (note 3) 200 ma 20 n s 20 n s +0. 8 v ?0.5 v 20 n s ?2 v 20 n s 20 n s v cc +2.0 v v cc +0.5 v 20 n s 2.0 v 52 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 14. operating ranges note operating ranges define those limits between wh ich the functionality of the device is guaranteed. 15. dc characteristics notes 1. the i cc current listed includes both the dc operating current and the frequency dependent component. 2. i cc active while embedded erase or embedded program is in progress. 3. not 100% tested. 4. maximum i cc specifications are tested with v cc = v ccmax . table 14.1 operating ranges parameter range ambient temperature (t a ) industrial devices ?40c to +85c extended devices ?40c to +125c v cc supply voltages v cc for 2.6v regulated voltage range (s29cd-j devices) 2.50v to 2.75v v cc for 3.3v regulated voltage range (s29cl-j devices) 3.00v to 3.60v v io supply voltages v io (s29cd-j devices) 1.65v to 2.75v v io (s29cl-j devices) 1.65v to 3.6v table 15.1 dc characteristic, cmos compatible parameter description test conditions min typ max unit i li input load current v in = v ss to v io , v io = v io max 1.0 a i liwp wp# input load current v in = v ss to v io , v io = v io max ?25 a i lit a9, acc input load current v cc = v ccmax ; a9 = 12.5v 35 a i lo output leakage current v out = v ss to v cc , v cc = v cc max 1.0 a i ccb v cc active burst read current (1) ce# = v il , oe# = v il , 8 double word s29cd-j 45 55 ma s29cl-j 65 90 ma i cc1 v cc active asynchronous read current (1) ce# = v il , oe# = v il 1 mhz 10 ma i cc3 v cc active program current ( 2 , 3 , 4 ) ce# = v il , oe# = v ih , acc = v ih 40 50 ma i cc4 v cc active erase current ( 2 , 3 , 4 )ce# = v il , oe# = v ih , acc = v ih 20 50 ma i cc5 v cc standby current (cmos) v cc = v cc max , ce# = v cc 0.3v 60 a i cc6 v cc active current (read while write) (3) ce# = v il , oe# = v il 30 90 ma i cc7 v cc reset current reset# = v il 60 a i cc8 automatic sleep mode current v ih = v cc 0.3 v, v il = v ss 0.3v 60 a i acc v acc acceleration current acc = v hh 20 ma v il input low voltage ?0.5 0.3 x v io v v ih input high voltage 0.7 x v io v cc v v ilclk clk input low voltage ?0.2 0.3 x v io v v ihclk clk input high voltage (cd-j) 0.7 x v cc 2.75 v v ihclk clk input high voltage (cl-j) 0.7 x v cc 3.6 v v id voltage for autoselect v cc = 2.5v 11.5 12.5 v v ol output low voltage i ol = 4.0 ma, v cc = v cc min 0.45 v i olrb ry/by#, output low current v ol = 0.4v 8 ma v hh accelerated (acc pin) high voltage i oh = ?2.0 ma, v cc = v cc min 0.85 x v cc v v oh output high voltage i oh = ?100 a, v cc = v cc min v io ?0.1 v v lko low v cc lock-out voltage (3) 1.6 2.0 v may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 53 data sheet 15.1 zero power flash figure 15.1 i cc1 current vs. time (showing active and automatic sleep currents) note addresses are switching at 1 mhz figure 15.2 typical i cc1 vs. frequency 0 500 1000 1500 2000 2500 3 000 3 500 4000 0 1 2 3 4 time in n s su pply c u rrent in ma 2.7 v 12 3 45 0 1 2 3 4 5 fre qu ency in mhz su pply c u rrent in ma 54 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 16. test conditions figure 16.1 test setup 17. test specifications table 17.2 key to switching waveforms 17.1 switching waveforms figure 17.1 input waveforms and measurement levels c l device under te s t table 17.1 test specifications test condition all options unit output load 1 ttl gate output load capacitance, c l (including jig capacitance) 30 pf input rise and fall times 5 ns input pulse levels 0.0v ? v io v input timing measurement reference levels v io /2 v output timing measurement reference levels v io /2 v waveform inputs outputs steady changing from h to l changing from l to h don?t care, any change permitted changing, state unknown does not apply center line is high impedance state (high-z) v io v ss v io /2 v v io /2 v o u tp u t me asu rement level inp u t may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 55 data sheet 18. ac characteristics 18.1 v cc and v io power-up figure 18.1 v cc and v io power-up diagram table 18.1 v cc and v io power-up parameter description test setup speed unit t vcs v cc setup time min 50 s t vios v io setup time min 50 s t rsth reset# low hold time min 50 s v cc v iop re s et# t vc s t r s th t vio s 56 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 18.2 asynchronous operations notes 1. not 100% tested. 2. see figure 16.1 and table 17.1 for test specifications. 3. toe during read array. figure 18.2 conventional read operations timings table 18.2 asynchronous read operations parameter description test setup speed options unit jedec std. 75 mhz 0r 66 mhz 0p 56 mhz 0m 40 mhz 0j/1j t avav t rc read cycle time (note 1) min 54 ns t avqv t acc address to output delay ce# = v il oe# = v il max 54 ns t elqv t ce chip enable to output delay oe# = v il max 54 ns t glqv t oe output enable to output delay max 20 ns t ehqz t df chip enable to output high-z (note 1) max 10 ns t ghqz t df output enable to output high-z (note 1) min 2 ns max 10 ns t oeh output enable hold time (note 1) read min 0 ns toggle and data# polling min 10 ns t axqx t oh output hold time from addresses, ce# or oe#, whichever occurs first (note 1) min 2 ns t ce o u tp u t s we# addre ss e s ce# oe# high z o u tp u t v a lid high z addre ss e s s t ab le t rc t acc t oeh t oe 0 v ry/by# re s et# t df t oh may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 57 data sheet figure 18.3 asynchronous command write timing notes 1. all commands have the same number of cycles in both asyn chronous and synchronous modes, including the read/reset command. only a single array access occurs after the f0h command is en tered. all subsequent accesses are burst mode when the burst mode option is enabled in the configuration register. 2. refer to table 18.5 for write timing parameters. adv# ce# v a lid d a t a addre ss e s d a t a we# oe# ind/wait# clk s t ab le addre ss t c s t ch t a s t ah t weh t d s t dh t oep t wc 58 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 18.3 synchronous operations notes 1. using the max t aavs and min t advcs specs together will result in incorrect data output. 2. not 100% tested 3. recommended 50% duty cycle table 18.3 burst mode for 32 mb and 16 mb parameter description speed options unit jedec std. 75 mhz, 0r 66 mhz, 0p 56 mhz, 0m 40 mhz, 0j/1j t bacc burst access time valid clock to output delay max8888ns t advcs adv# setup time to rising edge of clk min 6 ns t advch adv# hold time from rising edge of clk min 1.5 ns t advp adv# pulse width min 7.5 8.5 9.5 10.5 ns t bdh valid data hold from clk (note 2) 16 mbmin2233ns 32 mbmin0000ns t inds clk to valid ind/wait# (note 2) max 8 ns t indh ind/wait# hold from clk (note 2) min2233ns t iacc clk to valid data out, initial burst access max 48 54 54 54 ns t clk clk period min 13.3 15.15 17.85 25 ns max 60 t cr clk rise time (note 2) max 3 ns t cf clk fall time (note 2) max 3 ns t clkh clk high time (note 3) min 6.65 6.8 8.0 11.25 ns t clkl clk low time (note 3) min 6.65 6.8 8.0 11.25 ns t oe output enable to output valid max 20 ns t df t oez output enable to output high-z (note 2) min2233ns max 7.5 10 15 17 t ehqz t cez chip enable to output high-z (note 2) max 7.5 10 15 17 ns t ces ce# setup time to clock min4456ns t aavs adv# falling edge to address valid (note 1) max 6.5 ns t aavh address hold time from rising edge of adv# min 1 clk cycle t rstz reset# low to output high-z (note 2) max 7.5 10 15 17 ns t wadvh1 adv# falling edge to we# falling edge min 0 ns t wadvh2 adv# rising edge to we# rising edge min 10 ns t wadvs we# rising edge setup to adv# falling edge min 11.75 ns may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 59 data sheet figure 18.4 burst mode read (x32 mode) figure 18.5 synchronous command write/read timing note all commands have the same number of cycles in both asynchronous and synchronous modes, including the read/reset command. only a single array access occurs after the f0h command is entered. all subsequent accesses are burst mode when the burst mode optio n is enabled in the configuration register. d a d a +2 d a + 3 d a + 7 oe# d a t a addre ss e s a a ind# adv# clk ce# t ce s t advc s t aavh t oe t bacc t bdh t iacc t oez t cez d a +1 t aav s t ind s t indh t as clk adv# data in addresses data oe# data out valid address we# ind/wait# ce# valid address t ds t wadvh1 t wadvh2 t wp t ces t advp t advcs t oe t df t ehqz t dh t advch valid address 10 ns t wc t wadvs 60 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 18.4 hardware reset (reset#) note not 100% tested. figure 18.6 reset# timings table 18.4 hardware reset (reset#) parameter description test setup all speed options unit jedec std. t ready reset# pin low (during embedded algorithms) to read or write (see note) max 11 s t ready2 reset# pin low (not during embedded algorithms) to read or write (see note) min 500 ns t rp reset# pulse width min 500 ns t rh reset# high time before read (see note) min 50 ns t rpd reset# low to standby mode min 20 s t rb ry/by # recovery time min 0 ns t ready3 reset # active for bank not executing algorithm min 500 ns re s et# ry/by# ry/by# t rp t ready2 re s et timing to b a nk not exec u ting em b edded algorithm t ready ce#, oe# t rh ce#, oe# re s et timing to b a nk exec u ting em b edded algorithm re s et# t rp t rb may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 61 data sheet 18.5 write protect (wp#) figure 18.7 wp# timing 18.6 erase/program operations notes 1. not 100% tested. 2. see command definitions on page 73 for more information. 3. program erase parameters are the same, r egardless of synchronous or asynchronous mode. program/erase command wp# data valid wp# t busy t ds t dh we# ry/by# t wpws t wprh t wp table 18.5 erase/program operations parameter description all speed options unit jedec std. t avav t wc write cycle time (note 1) min 60 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time from we# rising edge min 11.75 ns t dvwh t ds data setup to we# rising edge min 18 ns t whdx t dh data hold from we# rising edge min 2 ns t ghwl t ghwl read recovery time before write (oe# high to we# low) (note 1) min 0 ns t oep oe# pulse width (note 1) min 16 ns t elwl t cs ce# setup time min 0 ns t wheh t ch ce# hold time min 0 ns t wlwh t wp we# width min 25 ns t weh we# hold time (note 1) min 0 ns t whwl t wph write pulse width high min 30 ns t whwh1 t whwh1 programming operation (note 2) , double-word typ 9 s t whwh2 t whwh2 sector erase operation (note 2) ty p 0 . 5 s e c . t vcs v cc setup time (note 1) min 50 s t rb recovery time from ry/by# (note 1) min 0 ns t busy ry/by# delay after we# rising edge (note 1) max 90 ns t wpws wp# setup to we# rising edge with command (note 1) min 20 ns t wprh wp# hold after ry/by# rising edge (note 1) max 2 ns 62 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet figure 18.8 program operation timings note pa = program address, pd = program data, d out is the true data at the program address. oe# we# ce# v cc d a t a addre ss e s t d s t ah t dh t wp pd t whwh1 t wc t a s t wph t vc s 555h pa pa re a d s t a t us d a t a (l as t two cycle s ) a0h t c s s t a t us d out progr a m comm a nd s e qu ence (l as t two cycle s ) ry/by# t rb t bu s y t ch pa t dh may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 63 data sheet figure 18.9 chip/sector erase operation timings note sa = sector address (for sector erase), va = valid address for reading status data (see write operation status on page 34 ). figure 18.10 back-to-back cycle timings oe# ce# addre ss e s v cc we# d a t a 2aah s a t wp t wc t a s t wph 555h for chip er as e 10 for chip er as e 3 0h t d s t vc s t c s t dh t ch in progre ss complete t whwh2 va va er as e comm a nd s e qu ence (l as t two cycle s )re a d s t a t us d a t a ry/by# t rb t bu s y t dh t ah oe# ce# we# addre ss e s t oh d a t a v a lid in v a lid in v a lid pa v a lid ra t wc t wph t ah t wp t d s t dh t rc t ce v a lid o u t t oe t acc t oeh t ghwl t df v a lid in ce# controlled write cycle s we# controlled write cycle v a lid pa v a lid pa t cp t cph t wc t wc re a d cycle t s r/w t wph 64 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet figure 18.11 data# polling timings (during embedded algorithms) ? note va = valid address. illustration shows first status cycle afte r command sequence, last status read cycle, and array data read c ycle. figure 18.12 toggle bit timings (during embedded algorithms) note va = valid address; not required for dq6. illustration shows first two status cycle after command sequence, last status read cy cle, and array data read cycle. we# ce# oe# high z t oe high z dq7 d a t a ry/by# t bu s y complement tr u e addre ss e s va t oeh t ce t ch t oh t df va va s t a t us d a t a complement s t a t us d a t a tr u e v a lid d a t a v a lid d a t a t acc t rc t wc we# ce# oe# high z t oe dq6/dq2 ry/by# t bu s y addre ss e s va t oeh t ce t ch t oh t df va va t acc t rc v a lid d a t a v a lid s t a t us v a lid s t a t us (fir s t re a d) ( s econd re a d) ( s top s toggling) v a lid s t a t us va may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 65 data sheet figure 18.13 dq2 vs. dq6 for erase/erase suspend operations note the system may use ce# or oe# to toggle dq2 and dq6. dq2 toggles only when read at an address within an erase-suspended sector. figure 18.14 synchronous data polling timing/toggle bit timings notes 1. the timings are similar to synchronous read timings and asynchronous data polling timings/toggle bit timing. 2. va = valid address. two read cycles are required to determine status. when the embedded algorithm operation is complete, the toggle bits will stop toggling. 3. rdy is active with data (a18 = 0 in the configuration register). when a18 = 1 in the configuration register, rdy is active on e clock cycle before data. 4. data polling requires burst access time delay. we# dq6 dq2 enter em b edded er as ing er as e sus pend enter er as e sus pend progr a m er as e re su me er as e er as e sus pend re a d er as e sus pend progr a m er as e sus pend re a d er as eer as e complete ce# clk adv# addre ss e s oe# d a t a rdy s t a t us d a t a s t a t us d a t a va va t oe t oe 66 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet figure 18.15 sector protect/unpr otect timing diagram notes * valid address for sector protect: a[7:0] = 3ah. valid address for sector unprotect: a[7:0] = 3ah. ** command for sector protect is 68h. command for sector unprotect is 60h. *** command for sector protect verify is 48h. command for sector unprotect verify is 40h. s ector protect: 150 s s ector unprot ect: 15 m s 1 s re s et# s a, a6, a1, a0 d a t a ce# we# oe# 60h 60h/6 8 h** 40h/4 8 h*** v a lid* v a lid* v a lid* s t a t us s ector protect/unprotect verify v ih may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 67 data sheet 18.7 alternate ce# controlle d erase/program operations notes 1. not 100% tested. 2. see command definitions on page 73 for more information. table 18.6 alternate ce# controlled erase/program operations parameter description all speed options unit jedec std. t avav t wc write cycle time (note 1) min 65 ns t avel t as address setup time min 0 ns t elax t ah address hold time min 45 ns t dveh t ds data setup time min 35 ns t ehdx t dh data hold time 16 mb min 2 ns 32 mb min 5 ns t ghel t ghel read recovery time before write (oe# high to we# low) min 0 ns t wlel t ws we# setup time min 0 ns t ehwh t wh we# hold time min 0 ns t wp we# width min 25 ns t eleh t cp ce# pulse width min 20 ns t ehel t cph ce# pulse width high min 30 ns t whwh1 t whwh1 programming operation (note 2) double-word typ 9 s t whwh2 t whwh2 sector erase operation (note 2) ty p 0 . 5 s e c t wcks we# rising edge setup to clk rising edge min 5 ns 68 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet figure 18.16 alternate ce# controlled write operation timings notes 1. pa = program address, pd = program data, dq7# = complement of the data written to the device, d out = data written to the device. 2. figure indicates the last two bus cycles of the command sequence. t ghel t w s oe# ce# we# re s et# t d s d a t a t ah t dh t cp dq7# d out t wc t a s t cph pa d a t a # polling a0 for progr a m 55 for er as e t rh t whwh1 or 2 ry/by# t wh pd for progr a m 3 0 for s ector er as e 10 for chip er as e 555 for progr a m 2aa for er as e pa for progr a m s a for s ector er as e 555 for chip er as e t bu s y t wph t wp addre ss e s may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 69 data sheet 18.8 erase and programming performance notes 1. typical program and erase times assume the following conditions: 25c, 2.5v v cc , 100k cycles. additionally, programming typicals assume checkerboard pattern. 2. under worst case conditions of 145c, v cc = 2.5v, 1m cycles. 3. the typical chip programming time is considerably less than the maximum chip programming time listed. 4. in the pre-programming step of the embedded erase algorithm, all bytes are programmed to 00h before erasure. 5. system-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. see table 20.1 and table 20.2 for further information on command definitions. 6. ppbs have a program/erase cycle endurance of 100 cycles. 7. guaranteed cycles per sector is 100k minimum. 18.9 pqfp and fortified bga pin capacitance notes 1. sampled, not 100% tested. 2. test conditions t a = 25c, f = 1.0 mhz. table 18.7 erase and programming performance parameter typ (note 1) max (note 2) unit comments sector erase time 0.5 5 s excludes 00h programming prior to erasure (note 4) chip erase time 16 mb = 23 32 mb = 46 16 mb = 230 32 mb = 460 s double word program time 8 130 s excludes system level overhead (note 5) accelerated double word program time 8 130 s accelerated chip program time 16 mb = 5 32 mb = 10 16 mb = 50 32 mb = 100 s chip program time, x32 (note 3) 16 mb = 12 32 mb = 24 16 mb = 120 32 mb = 240 s table 18.8 pqfp and fortified bga pin capacitance parameter symbol parameter description test setup typ max unit c in input capacitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8.5 12 pf c in2 control pin capacitance v in = 0 7.5 9 pf 70 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 19. appendix 1 19.1 common flash memory interface (cfi) the common flash in terface (cfi) specification outlines device and host system software in terrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. software support can then be device -independent, jedec id-independent, and forward- and backward-compatible for the specif ied flash device families. flash vendors can standardize existing interfaces for long-term compatibility. this device enters the cfi query mode when the system writes the cfi query command, 98h, to address 55h in word mode (or address aah in byte mode), any time the device is ready to read array data. the system can read cfi information at the addresses given in table 19.1 - table 19.3 . in order to terminate reading cfi data, the system must wr ite the reset command. the system can also write the cfi query command when the device is in the autoselect mode. the device enters the cfi query mode, and the system can read cfi data at the addresses given in table 19.1 - table 19.3 . the system must write the reset command to return the device to the autoselect mode. for further information, plea se refer to the cfi specification and cfi publication 100. contact a spansion representative for copies of these documents. table 19.1 cfi query identification string addresses data description 10h 11h 12h 0051h 0052h 0059h query unique ascii string qry 13h 14h 0002h 0000h primary oem command set 15h 16h 0040h 0000h address for primary extended table 17h 18h 0000h 0000h alternate oem command set (00h = none exists) 19h 1ah 0000h 0000h address for alternate oem extended table (00h = none exists) table 19.2 cfi system interface string addresses data description 1bh (see description) v cc min. (write/erase) dq7?dq4: volts, dq3?dq0: 100 millivolt 0025h = s29cd-j devices 0030h = s29cl-j devices 1ch (see description) v cc max. (write/erase) dq7?dq4: volts, dq3?dq0: 100 millivolt 0027h = s29cd-j devices 0036h = s29cl-j devices 1dh 0000h v pp min. voltage (00h = no v pp pin present) 1eh 0000h v pp max. voltage (00h = no v pp pin present) 1fh 0004h typical timeout per single word/doubleword program 2 n s 20h 0000h typical timeout for min. size buffer program 2 n s (00h = not supported) 21h 0009h typical timeout per individual block erase 2 n ms 22h 0000h typical timeout for full chip erase 2 n ms (00h = not supported) 23h 0005h max. timeout for word/doubleword program 2 n times typical 24h 0000h max. timeout for buffer write 2 n times typical 25h 0007h max. timeout per individual block erase 2 n times typical 26h 0000h max. timeout for full chip erase 2 n times typical (00h = not supported) may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 71 data sheet table 19.3 device geometry definition addresses data description 27h (see description) device size = 2 n byte 0015h = 16 mb device 0016h = 32 mb device 28h 29h 0003h 0000h flash device interface description (for co mplete description, please refer to cfi publication 100) 0000 = x8-only asynchronous interface 0001 = x16-only asynchronous interface 0002 = supports x8 and x16 via byte# with asynchronous interface 0003 = x 32-only asynchronous interface 0005 = supports x16 and x32 via word# with asynchronous interface 2ah 2bh 0000h 0000h max. number of byte in multi-byte program = 2 n (00h = not supported) 2ch 0003h number of erase block regions within device 2dh 2eh 2fh 30h 0007h 0000h 0020h 0000h erase block region 1 information (refer to the cfi specification or cfi publication 100) 31h 32h 33h 34h (see description) 0000h 0000h 0001h erase block region 2 information (refer to the cfi specification or cfi publication 100) address 31h data: 001dh = 16 mb device 003dh = 32 mb device 35h 36h 37h 38h 0007h 0000h 0020h 0000h erase block region 3 information (refer to the cfi specification or cfi publication 100) 39h 3ah 3bh 3ch 0000h 0000h 0000h 0000h erase block region 4 information (refer to the cfi specification or cfi publication 100) table 19.4 cfi primary vendor-specific extended query (sheet 1 of 2) addresses data description 40h 41h 42h 0050h 0052h 0049h query-unique ascii string pri 43h 0031h major version number, ascii (reflects modifications to the silicon) 44h 0033h minor version number, ascii (reflects modifications to the cfi table) 45h 000ch address sensitive unlock (dq1, dq0) 00 = required, 01 = not required silicon revision number (dq5?dq2) 0000 = cs49 0001 = cs59 0010 = cs99 0011 = cs69 0100 = cs119 46h 0002h erase suspend (1 byte) 00 = not supported 01 = to read only 02 = to read and write 47h 0001h sector protect (1 byte) 00 = not supported, x = number of sectors in per group 48h 0000h temporary sector unprotect 00h = not supported, 01h = supported 72 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet 49h 0006h sector protect/unprotect scheme (1 byte) 01 =29f040 mode, 02 = 29f016 mode 03 = 29f400 mode, 04 = 29lv800 mode 05 = 29bds640 mode (software command locking) 06 = bdd160 mode (new sector protect) 07 = 29lv800 + pdl128 (new sector protect) mode 4ah 0037h simultaneous read/write (1 byte) 00h = not supported, x = number of sectors in all banks except bank 1 4bh 0001h burst mode type 00h = not supported, 01h = supported 4ch 0000h page mode type 00h = not supported, 01h = 4 word page, 02h = 8 word page 4dh 00b5h acc (acceleration) supply minimum 00h = not supported (dq7-dq4: volt in hex, dq3-dq0: 100 mv in bcd) 4eh 00c5h acc (acceleration) supply maximum 00h = not supported, (dq7-dq4: volt in hex, dq3-dq0: 100 mv in bcd) 4fh 0001h top/bottom boot sector flag (1 byte) 00h = uniform device, no wp# control, 01h = 8 x 8 kb sectors at top and bottom with wp# control 02h = bottom boot device 03h = top boot device 04h = uniform, bottom wp# protect 05h = uniform, top wp# protect if the number of erase block regions = 1, then ignore this field 50h 0001h program suspend 00 = not supported 01 = supported 51h 0000h write buffer size 2 (n+1) word(s) 57h 0002h bank organization (1 byte) 00 = if data at 4ah is zero xx = number of banks 58h 0017h bank 1 region information (1 byte) xx = number of sectors in bank 1 59h 0037h bank 2 region information (1 byte) xx = number of sectors in bank 2 5ah 0000h bank 3 region information (1 byte) xx = number of sectors in bank 3 5bh 0000h bank 4 region information (1 byte) xx = number of sectors in bank 4 table 19.4 cfi primary vendor-specific extended query (sheet 2 of 2) addresses data description may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 73 data sheet 20. appendix 2 20.1 command definitions legend notes table 20.1 memory array command definitions (x32 mode) command (notes) cycles bus cycles (notes 1 ? 4 ) first second third fourth fifth sixth addr data addr data addr data addr data addr data addr data read ( 5 )1 ra rd reset ( 6 )1xxxf0 autoselect ( 7 ) manufacturer id 4 555 aa 2aa 55 555 90 ba+x00 01 device id ( 8 ) 6 555 aa 2aa 55 555 90 ba+x01 7e ba+x0e 09 ba+x0f 00/01 program 4 555 aa 2aa 55 555 a0 pa pd chip erase 6 555 aa 2aa 55 555 80 555 aa 2aa 55 555 10 sector erase 6 555 aa 2aa 55 555 80 555 aa 2aa 55 sa 30 program/erase suspend ( 9 )1bab0 program/erase resume ( 10 )1ba30 cfi query ( 11 , 12 )15598 accelerated program ( 13 ) 2 xx a0 pa pd configuration register verify ( 12 ) 3 555 aa 2aa 55 ba+555 c6 ba+xx rd configuration register write ( 14 ) 4 555 aa 2aa 55 555 d0 xx wd unlock bypass entry ( 15 ) 3 555 aa 2aa 55 555 20 unlock bypass program ( 15 ) 2 xx a0 pa pd unlock bypass erase ( 15 ) 2 xx 80 xx 10 unlock bypass cfi ( 11 , 15 )1xx98 unlock bypass reset ( 15 ) 2 xx 90 xx 00 ba = bank address. the set of addresses that comprise a bank. the system may write any address within a bank to identify that bank for a command. pa = program address (amax?a0). addresses latch on the falling edge of the we# or ce# pulse, whichever happens later. pd = program data (dqmax?dq0) written to location pa. data latches on the rising edge of we# or ce# pulse, whichever happens first. ra = read address (amax?a0). rd = read data. data dqmax?dq0 at address location ra. sa = sector address. the set of addresses that comprise a sector. the system may write any address within a sector to identify that sector for a command. wd = write data. see ?configuration register? definition for specific write data. data latched on rising edge of we#. x = don?t care 1. see table 8.1 for description of bus operations. 2. all values are in hexadecimal. 3. shaded cells in table denote read cycles. all other cycles are write operations. 4. during unlock cycles, (lower address bits are 555 or 2aah as shown in table) address bits higher than a11 (except where ba is required) and data bits higher than dq7 are don?t cares. 5. no unlock or command cycles required when bank is reading array data. 6. the reset command is required to return to the read mode (or to the erase- suspend-read mode if previously in er ase suspend) when a bank is in the autoselect mode, or if dq5 goes high (while the bank is providing status information). 7. the fourth cycle of the autoselect command sequence is a read cycle. the system must provide the bank address to obtain the manufacturer id or device id information. see autoselect on page 28 for more information. 8. the device id must be read across the fourth, fifth, and sixth cycles. 00h in the sixth cycle indicates ordering option 00, 01h indicates ordering option 01. 9. the system may read and program in non-erasing sectors when in the program/erase suspend mode. the program/erase suspend command is valid only during a sector erase operation, and requires the bank address. 10. the program/erase resume command is valid only during the erase suspend mode, and requires the bank address. 11. command is valid when device is ready to read array data. 12. asynchronous read operations. 13. acc must be at v id during the entire operation of this command. 14. command is ignored during any embedded program, embedded erase, or suspend operation. 15. the unlock bypass entry command is required prior to any unlock bypass operation. the unlock bypass reset command is required to return to the read mode. 74 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet legend notes table 20.2 sector protection command definitions (x32 mode) command (notes) cycles bus cycles (notes 1 ? 4 ) first second third fourth fifth sixth addr data addr data addr data addr data addr data addr data reset 1 xxx f0 secured silicon sector entry 3 555 aa 2aa 55 555 88 secured silicon sector exit 4 555 aa 2aa 55 555 90 xx 00 secured silicon protection bit program ( 5 , 6 ) 6 555 aa 2aa 55 555 60 ow 68 ow 48 ow rd(0) secured silicon protection bit status 6 555 aa 2aa 55 555 60 ow rd(0) password program ( 5 , 7 , 8 ) 4 555 aa 2aa 55 555 38 pwa[0-1] pwd[0-1] password verify 4 555 aa 2aa 55 555 c8 pwa[0-1] pwd[0-1] password unlock ( 7 , 8 ) 5 555 aa 2aa 55 555 28 pwa[0-1] pwd[0-1] ppb program ( 5 , 6 ) 6 555 aa 2aa 55 555 60 sg+wp 68 sg+wp 48 sg+wp rd(0) all ppb erase ( 5 , 9 , 10 ) 6 555 aa 2aa 55 555 60 wp 60 wp 40 wp rd(0) ppb status ( 11 , 12 ) 4 555 aa 2aa 55 ba+555 90 sa+x02 00/01 ppb lock bit set 3 555 aa 2aa 55 555 78 ppb lock bit status 4 555 aa 2aa 55 ba+555 58 sa rd(1) dyb write ( 7 ) 4 555 aa 2aa 55 555 48 sa x1 dyb erase ( 7 ) 4 555 aa 2aa 55 555 48 sa x0 dyb status ( 12 ) 4 555 aa 2aa 55 ba+555 58 sa rd(0) ppmlb program ( 5 , 6 ) 6 555 aa 2aa 55 555 60 pl 68 pl 48 pl rd(0) ppmlb status ( 5 ) 6 555 aa 2aa 55 555 60 pl rd(0) spmlb program ( 5 , 6 ) 6 555 aa 2aa 55 555 60 sl 68 sl 48 sl rd(0) spmlb status ( 5 ) 6 555 aa 2aa 55 555 60 sl rd(0) dyb = dynamic protection bit ow = address (a5?a0) is (011x10). ppb = persistent protection bit pwa = password address. a0 selects between the low and high 32-bit portions of the 64-bit password pwd = password data. must be written over two cycles. pl = password protection mode lock address (a5?a0) is (001x10) rd(0) = read data dq0 protection indicator bit. if protected, dq0= 1, if unprotected, dq0 = 0. rd(1) = read data dq1 protection indicator bit. if protected, dq1 = 1, if unprotected, dq1 = 0. sa = sector address. the set of addresses that comprise a sector. the system may write any address within a sector to identify that sector for a command. sg = sector group address ba = bank address. the set of addresses that comprise a bank. the system may write any address within a bank to identify that bank for a command. sl = persistent protection mode lock address (a5?a0) is (010x10) wp = ppb address (a5?a0) is (111010) x = don?t care ppmlb = password protection mode locking bit spmlb = persistent protection mode locking bit 1. see table 8.1 for description of bus operations. 2. all values are in hexadecimal. 3. shaded cells in table denote read cycles. all other cycles are write operations. 4. during unlock cycles, (lower address bits are 555 or 2aah as shown in table) address bits higher than a11 (except where ba is required) and data bits higher than dq7 are don?t cares. 5. the reset command returns the device to reading the array. 6. the fourth cycle programs the addressed locking bit. the fifth and sixth cycles are used to validate whether the bit has been fully programmed. if dq0 (in the sixth cycle) reads 0, the pr ogram command must be issued and verified again. 7. data is latched on the rising edge of we#. 8. the entire four bus-cycle sequence must be entered for each portion of the password. 9. the fourth cycle erases all ppbs. the fifth and sixth cycles are used to validate whether the bits have been fu lly erased. if dq0 (in the sixth cycle) reads 1, the erase command must be issued and verified again. 10. before issuing the erase command, all ppbs should be programmed in order to prevent over-erasure of ppbs. 11. in the fourth cycle, 00h indicates ppb set; 01h indicates ppb not set. 12. the status of additional ppbs and dybs may be read (following the fourth cycle) without reissuing the entire command sequence. may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 75 data sheet 21. revision history section description revision a0 (march 1, 2005) initial release. revision a1 (april 15, 2005) ordering information and valid combinations tables updated to include lead pb-free options. revision a2 (january 20, 2006) ordering information added ?contact factory? for 75 mhz. modified order ing options for characters 15 and 16 to reflect autoselect id and top/bottom boot. changed ?n? for extended temperature range to ?m?. input/output descriptions removed logic symbol diagrams. additional resources added section. memory address map changed ?bank 2? to ?bank 1?. simultaneous read/write operation removed ordering options table (tables 3 and 4). advanced sector protection/ unprotection added advanced sector protection/unprotection figure. added figures for ppb erase and program algorithm. electronic marking added in electronic marking section. absolute maximum ratings modified v cc ratings to reflect 2.6 v and 3.6 v devices. modified v cc ratings to reflect 16 mb and 32 mb devices. ac characteristics added note ?t oe during read array?. asynchronous read operation changed values of t avav , t avqv , t elqv , t glqv in table. conventional read operation timings moved t df line to 90% on the high-z output in figure. burst mode read for 32 mb and 16 mb added t aavs and t aavh timing parameters to table. changed t ch to t clkh . changed t cl to t clkl . removed the following timing parameters: ?t ds (data setup to we# rising edge) ?t dh (data hold from we# rising edge) ?t as (address setup to falling edge of we#) ?t ah (address hold from falling edge of we#) ?t cs (ce# setup time) ?t ch (ce# hold time) ?t acs (address setup time to clk) ?t ach (address hold time from adv# rising edge of clk while adv# is low) burst mode read (x32 mode) added the following timing parameters: ?t aavs ?t dvch ?t inds ?t indh asynchronous command write timing in figure, changed t oeh to t weh ; changed t wph to t oep . synchronous command write/read timing removed t wadvh and t wcks from figure. wp# timing in figure, changed t ch to t busy erase/program operations in table, added note 3: program/erase parameter s are the same regardle ss of synchronous or asynchronous mode. added t oep (oe# high pulse) alternative ce# controlled erase/ program operations removed t oes from table. added t wadvs and t wcks appendix 2: command definitions removed ?or when de vice is in autoselect mode? from note 14. revision b0 (june 12, 2006) global changed document status to preliminary. distinctive characteristics changed cycli ng endurance from typical to guaranteed. performance characteristics updated max as ynch. access time, max ce# access time, and max oe# access time in table. ordering information updated additional order ing options in designator breakout table. updated valid combination tables. 76 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet input/output descriptions and logic symbols changed ry/by# description. physical dimensions/connection diagrams changed note on connection diagrams. additional resources updated contact information. hardware reset (reset#) added section. autoselect updated third and fourth paragraphs in section. updated autoselect codes table. erase suspend / erase resume commands modified second paragraph. replaced allowa ble operations table with bulleted list. program suspend / program resume commands replaced allowable operations table with bulleted list. reset command added section. secured silicon sector flash memory region modified secured silicon sector addresses table. absolute maximum ratings modified v cc and v io ratings. modified note 1. operating ranges modified specification titles and descriptions (no specification value changes). dc characteristics, cmos compatible table modified i ccb specification. deleted note 5. added note 3 references to table. burst mode read for 32 mb and 16 mb table modified t advcs , t clkh , t clkl , t aavs specifications. added t rstz , t wadvh1 , and t wadvh2 specifications. added notes 2 and 3, and note references to table. synchronous command write/read timing figure added t wadvh1 and t wadvh2 to figure. deleted t acs and t ach from figure. hardware reset (reset#) added table to section. erase/program operations table added note references. deleted t oep specification. erase and programming performance changed doub le word program time specification. common flash memory interface (cfi) cfi system interface string table: changed description and data for addresses 1bh and 1ch. device geometry definition table: changed description and data for address 27h. revision b1 (september 27, 2006) global data sheet format reorganized. distinctive characteristics changed cycli ng endurance specification to typical. performance characteristics changed t bacc specifications for 66 mhz, 56 mhz, 40 mhz speed options. ordering information added quantities to packing type des criptions, restructured table for easier reference. s29cd-j and s29cl-j flash family autoselect codes (high voltage method) in table, modified description of read cycle 3 dq7?dq0. dq6 and dq2 indications in table, corrected third column heading section 8.9, reset command added table. section 13.1, absolute maximum ratings deleted oe# from section. table 18.3, burst mode read for 32 mb and 16 mb in table, changed t advcs , t bdh specifications. modi fied description for t iacc . deleted minimum specifications for t aavh . burst mode read (x32 mode) in figure, modified period for t iacc in drawing. revision b2 (march 7, 2007) distinctive characteristics corrected number of 16k sector s in 16 mb devices. modified read access times table. ordering information changed boot sector option part number designators. changed valid combinations. modified 10th character option descriptions. block diagram deleted word# input. 2-, 4-, 8- double word linear burst operation in 32- bit linear and burst data order table, deleted reference to word# input. sector erase modified second paragraph; added reference to application note. section description may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 77 data sheet advanced sector protection/ unprotection modified advanced sector protec tion/unprotection figure and notes . in some subsections, changed ?sector? to ?sector group?. dc characteristics changed i ccb test conditions and i cc1 maximum specification. test specifications changed c l . asynchronous operations asynchronous command write timing figure: added note. asynchronous read operations table: changed t rc , t acc , t ce for 75 mhz device. synchronous operations burst mode read for 32 mb and 16 mb table: changed t inds , t clkl , t aavh , and t wadvh1 specifications. burst mode read figure: modified period lengths for several specifications. erase/program operations added t weh and t oep specifications to table. latchup characteristics deleted section. common flash memory interface (cfi) cfi system interface string table: modified description of address 1bh. cfi primary vendor-specific extended query table: modified data at address 45h. revision b3 (march 30, 2009) global removed ?preliminary? changed all instances of v ccq to v io distinctive characteristics removed ?or without? (wra p around) from programmable burst interface bullet performance characteristics added notice to refer to pr ogramming best practices application note for 32 mb devices. ordering information added s29cl032j to valid opn diagram. corrected valid combinations table. input/output descriptions and logic symbols subscript cc for v cc , io for v io , ss for v ss in table. changed type for v io to ?supply? changed type for v ss to ?supply? block diagram removed dqmax-dq0 label from inputs to burst address counter and address latch. removed amax-a0 label from i/o buffers. table: s29cd016j/cl016j (top boot) sector and memory address map changed note 2 to refer to bank 0 and 1 instead of bank 1 and 2. table: 32-bit linear and burst data order removed ?x16? removed ?a0:a-1? from output data sequence column for four linear data transfers. removed ?a1:a-1? from output data sequence column for eight linear data transfers. programming added notice to refer to programming best practices application note for 32 mb devices. table: dc characteristic, cmos compatible changed max i ccb for s29cl-j to 90 ma. table: burst mode for 32 mb and 16 mb corrected values for t bdh with separate values for 16mb and 32mb. added t wadvs parameter to table. figure: synchronous command write/ read timing added timing definition for t wadvs . table: erase/program operations appended ?from we# rising edge? to t ah description. changed t ah min to 11.75 ns. figure: program operation timings updated timing diagram to reflect new t ah value. figure: chip/sector erase operation timings updated timing diagram to reflect new t ah value. table: alternate ce# controlled erase/ program operations removed t wadvs parameter. product overview removed ?or without?. table: device bus operation changed ?x? to ?h? under clk column for ce# row. accelerated program and erase operations removed all mention of accelerated erase. unlock bypass removed mention of unlock bypass sector erase. simultaneous read/write added in warning to indicate restrictions on simultaneous read/write conditions. section description 78 s29cd-j and s29cl-j flash family s29cd-j_cl-j_00_b5 may 25, 2011 data sheet vcc and vio power-up and power- down sequencing added reference to timing section. standby mode changed vcc 0.2v to vcc 10%. figure: test setup removed note ?diodes are in3064 or equivalent?. table: alternate ce# controlled erase/ program operations corrected values for t dh with separate values for 16 mb and 32 mb. table: memory array command definitions (x32 mode) cleaned up notes. revision b4 (october 30, 2009) absolute maximum ratings corrected address, data, control signals identifiers to correctly di stinguish different ratings between cl016l, cl032j, cd016j, and cd032j. dc characteristics added line item to distinguish v ihclk value differences between cl-j and cd-j. synchronous operation corrected figure ?burst mode read (x32 mode)? to re flect max linear burst length of 8 double words instead of 32. hardware reset (reset#) corrected table ?burst initial access delay?: changed t ready2 , t rp , and t ready3 set up to min instead of max. corrected figure ?reset# timings? to add t ready2 to timing diagram for bank not executing embedded algorithm. revision b4 (may 25, 2011) physical dimensions/connection diagrams on the 80-ball fortified bga connection di agram, corrected the k1 pin name from v ccq to v io section description may 25, 2011 s29cd-j_cl-j_00_b5 s29cd-j and s29cl-j flash family 79 data sheet colophon the products described in this document are designed, developed and manufactured as contemplated for general use, including wit hout limitation, ordinary industrial use, genera l office use, personal use, and household use, but are not designed, developed and m anufactured as contemplated (1) for any use that includes fatal risks or dangers t hat, unless extremely high safety is secured, could have a s erious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic contro l, mass transport control, medical life support system, missile launch control in we apon system), or (2) for any use where chance of failure is intole rable (i.e., submersible repeater and artifi cial satellite). please note that spansion will not be liable to you and/or any third party for any claims or damages arising in connection with abo ve-mentioned uses of the products. any semic onductor devices have an inherent chance of failure. you must protect agains t injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. if any products described in this document r epresent goods or technologies s ubject to certain restriction s on export under the foreign exchange and foreign trade law of japan, the us export ad ministration regulations or the applicable laws of any oth er country, the prior authorization by the respective government entity will be required for export of those products. trademarks and notice the contents of this document are subjec t to change without notice. this document ma y contain information on a spansion product under development by spansion. spansion reserves the right to change or discontinue work on any product without notice. the informati on in this document is provided as is without warran ty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. spansion assume s no liability for any damages of any kind arising out of the use of the information in this document. copyright ? 2005?2011 spansion inc. all rights reserved. spansion ? , the spansion logo, mirrorbit ? , mirrorbit ? eclipse?, ornand?, ecoram? and combinations thereof, are trademar ks and registered trademarks of spansion llc in the united states and other count ries. other names used are for informati onal purposes only and may be trademarks of their respective owners. |
Price & Availability of S29CL032J0JFAI00
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |